Resistive switching characteristics in printed Cu/CuO/(AgO)/Ag memristors

Abstract

A resistive switching behaviour of printed, flexible Cu/CuO/(AgO)/Ag memristor devices is demonstrated for the first time. It is suggested that the high resistance state and low resistance state of bipolar resistive switching behaviour are governed by the migration of oxygen between the copper oxide and silver oxide layers. The devices have characteristics of inexpensive low-temperature fabrication, low-power operation and no required electroforming process. Ink-jet printing was used to fabricate the devices on polymer substrates. Since these devices are fabricated on flexible polyimide, they have compatibility with flexible electronic technologies.

Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning

“…These Cu ions will be arranged in the form of filament that grows from cathode (Au) to anode (ITO), preferably along the grain boundaries, which will lead to LRS. The creation of Cu filament from Cu interstitials has been observed in other reports. − When applying the positive bias on Au electrode, the rupture of Cu filament occurs due to oxidation of Cu atoms, which will lead to HRS.…”

“…However, some modification in the synthesis phenomena may be required to obtain good switching characteristics to make these solution-processed Cu x O thin films applicable in low-cost memory technology. In this context, a solution-based method offers the possibility of tuning stoichiometry of Cu x O as the point defect concentration (Cu interstitials (Cu i )), Cu vacancies (V cu ), O interstitials (O i ), and O vacancies (V o ) derived from molecular precursor solutions are strongly dependent on the annealing conditions and the precursor solution concentration. − The two more important native defects playing an influential role in controlling the switching characteristics are V o , and Cu i . − Taking advantage of dependence of cationic defect concentration of solution-processed Cu x O thin films on annealing conditions, concentration of cationic defects can be varied in Cu x O thin films. Mostly solution-processed Cu x O thin film grows in polycrystalline structure without annealing. − However the crystal quality can be improved by thermal annealing …”

A comprehensive investigation of MoO3based resistive random access memory

“…Recently, certain devices have reported to show an electroforming-free process. [50][51][52][53][54] The forming voltage was not required for our device, i.e. there was no electroforming process needed.…”

Memristor Fabrication Through Printing Technologies: A Review

“…Commonly, the printed memristor are comparatively of large size i.e. in micrometer whereas, the solid state memristors are in nanometer size [19,46]. As compared to solid state processing, printed electronics technology is good option for the rapid prototyping of devices because of ambient processing, low cost, rapid fabrication and low material wastage [47].…”