Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices

Abstract

In this study, we have investigated the resistive switching behavior of multi-stacked PVA/ GO+PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼10 4 ) and low V SET (3.5±0.29 V) and V RESET (−1.81±0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2×10 3 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.

Resistive Switching in Graphene Oxide

“…Several authors have postulated variations of this mechanism, i.e., oxygen ions drift leading to changes on the energy barrier at the interface GO-electrode, as the source of resistive switching in their GO experiments , and despite the fact that in some cases the model described in Jeong et al (2010) is not explicitly described (Kim et al, 2019), the resistive switching arguments provided are aligned with this approach.…”

Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film

“…Kim et al investigated the multi-stacked PVA/ GO + PVA/PVA layer based RRAM devices which were distributed the high ON/OFF ratio ($10 4 ) and good retention (>2 Â 10 3 s). 9 Hmar reported the devices using hybrid composite of ZnO nanoparticles embedded in PVA and PEDOT:PSS with low operating voltage and switching current ratio larger than ve orders of magnitude. 10 The exible devices remain good performance even aer bending the device from 60-120 .…”

Printable and Flexible Planar Silver Electrodes-Based Resistive Switching Sensory Array

“…The planar RS device is in the HRS from 0 V to the operating voltage of ∼2.5 V and the conductivity decreases when the voltage increased to −2.9 V, which shows bipolar conversion characteristics. The low operating voltage shows low operating power consumption compared with the flexible RS devices (Kim et al, 2019). Figure 4B shows the resistive switching performance of another planar RS device with the same structure for four cycles with an applied voltage of −0.8-3 V. The planar RS device sets to the low resistance state between 0.75 and 1.75 V. At ∼0 V, the planar RS device resets to a high resistance state, which shows unipolar conversion characteristics.…”