Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications

Chen, Xinman; Wu, Guangheng; Bao, Dinghua

doi:10.1063/1.2978158

Cited by 108 publications

(76 citation statements)

References 12 publications

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“…However, the conduction mechanisms of HRS are much more complicated. Fitting results for HRS suggest that the charge transport behavior is in good agreement with a trap-controlled space charge limited current (SCLC), which consists of two portions: the Ohmic region (I ∝ V) and the Child's law region (I ∝ V 2 ) (Strukov et al, 2008;Kim et al, 2007;Son & Shin, 2008;Chen et al, 2008 ). The different conduction behaviors in HRS and LRS suggest that the high conductivity in On-state cell is likely to be a confined effect rather than a homogenously distributed one .…”

Section: Morphology Of Go Sheets and Thin Filmsmentioning

confidence: 61%

Nonvolatile resistive switching in graphene oxide thin films

He¹,

Zhuge²,

Zhou³

et al. 2009

Applied Physics Letters

236

177

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Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 104 s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications.

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Section: Morphology Of Go Sheets and Thin Filmsmentioning

confidence: 61%

Nonvolatile resistive switching in graphene oxide thin films

He¹,

Zhuge²,

Zhou³

et al. 2009

Applied Physics Letters

236

177

View full text Add to dashboard Cite

show abstract

“…5, the LRS and HRS resistances are kept stable for more than 10 4 s, indicating that the memory device is nonvolatile and stable at room temperature. (Strukov et al, 2008;Kim et al, 2007;Son & Shin, 2008;Chen et al, 2008 ). The different conduction behaviors in HRS and LRS suggest that the high conductivity in On-state cell is likely to be a confined effect rather than a homogenously distributed one .…”

Section: Morphology Of Go Sheets and Thin Filmsmentioning

confidence: 99%

Non-Volatile Resistive Switching in Graphene Oxide Thin Films

Zhuge¹,

Li²,

He³

et al. 2011

Physics and Applications of Graphene - Experiments

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“…Considering that Mg-doped ZnO is a very important multifunctional material, Bao research group firstly studied the resistance switching properties of the Mg-doped ZnO thin films. 41), 42) They prepared highly c-axis oriented Mg0.2Zn0.8O thin films with hexagonal structure on Pt/TiO2/SiO2/Si substrates by sol-gel spin coating technique. The Pt/Mg0.2Zn0.8O/Pt devices showed a reversible and stable resistance switching characteristic.…”

Section: )40)mentioning

confidence: 99%

Transition metal oxide thin films for nonvolatile resistive random access memory applications

Bao

2009

J. Ceram. Soc. Japan

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Resistive random access memory (RRAM) based on reversible bistable resistance switching effect is attracting much attention for its superior properties such as nonvolatility, long retention time, simple device structure, small size, and low operating voltage. The unique resistance switching properties have been observed in some binary transition metal oxides, perovskite oxides, and organic molecular materials. This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite thin films, for resistive random access memory applications, and also presents some of our own research work in this field. There is no doubt that study on transition metal oxide thin films for RRAM application will have been a topic of great interest in the forthcoming years, and it is expected that better understanding of physical mechanisms for the bistable resistance switching of the transition metal oxide thin films sandwiched between two metal electrodes can be achieved.

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Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications

Cited by 108 publications

References 12 publications

Nonvolatile resistive switching in graphene oxide thin films

Nonvolatile resistive switching in graphene oxide thin films

Non-Volatile Resistive Switching in Graphene Oxide Thin Films

Transition metal oxide thin films for nonvolatile resistive random access memory applications

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