Nonvolatile resistive switching in graphene oxide thin films

He, Congli; Zhuge, Fei; Zhou, Xiaoyu; Li, M.; Zhou, Guangjun; Liu, Y. W.; Wang, J. Z.; Chen, B.; Su, Wei-Jhih; Liu, Z. P.; Wu, Yangjiang; Cui, Ping; Li, Run-Wei

doi:10.1063/1.3271177

Cited by 236 publications

(189 citation statements)

References 37 publications

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“…Novel devices have been reported that combine the superior electronic properties of graphene with other chemical and mechanical phenomena, such as resistive switching and electromechanical memories. [20][21][22] The mechanism of observed resistive switching in some graphene-based devices remained unclear. Graphene oxide (GO) is an insulator with a large effective band gap and band structure that depends on the stoichiometry.…”

Section: Reversible Electrical Reduction and Oxidation Of Graphene Oxidementioning

confidence: 99%

Reversible Electrical Reduction and Oxidation of Graphene Oxide

et al. 2011

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Cataloged from PDF version of article.We demonstrate that graphene oxide can be reversibly reduced and oxidized using\ud electrical stimulus. Controlled reduction and oxidation in two-terminal devices containing multilayer\ud graphene oxide films are shown to result in switching between partially reduced graphene oxide and\ud graphene, a process which modifies the electronic and optical properties. High-resolution tunneling\ud current and electrostatic force imaging reveal that graphene oxide islands are formed on multilayer\ud graphene, turning graphene into a self-assembled heterostructure random nanomesh. Charge\ud storage and resistive switching behavior is observed in two-terminal devices made of multilayer\ud graphene oxide films, correlated with electrochromic effects. Tip-induced reduction and oxidation\ud are also demonstrated. Results are discussed in terms of thermodynamics of oxidation and reduction\ud reactions

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Section: Reversible Electrical Reduction and Oxidation Of Graphene Oxidementioning

confidence: 99%

Reversible Electrical Reduction and Oxidation of Graphene Oxide

et al. 2011

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“…Carbon-based materials, including amorphous carbon (a-C) [17]- [26], fullerene [27], graphene oxide [28], [29], carbon/ organic composite [30], and carbon nanotube (CNT) [31], have been shown to exhibit resistive switching behavior for nonvolatile memory application. Amorphous carbon is a noncrystalline carbon allotrope in which a long-range crystalline order is not present.…”

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confidence: 99%

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Chai

Takei

et al. 2011

IEEE Trans. Electron Devices

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Abstract-There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.Index Terms-Amorphous carbon (a-C), carbon nanotube (CNT), complementary resistive switching, nonvolatile memory, resistive random access memory (RRAM), resistive switching memory.

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“…24 It all depends on oxygen diffusion and mobility on the surface of the graphene plane. 41 The oxygen diffusivity is determined from the equation:…”

Section: Resultsmentioning

confidence: 99%

“…Their bandstructure and electronic congurations can be easily modulated by changing the chemical functionalities attached to the surface. [24][25][26][27] High quality GO akes are usually prepared by chemical oxidation of natural graphite with exfoliation into individual layers. The chemical properties of these individual layers can be signicantly tuned by oxidation; one can achieve graphene with the complete removal of the carbon-oxygen (C-O) bond.…”

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confidence: 99%

Electroforming free high resistance resistive switching of graphene oxide modified polar-PVDF

2015

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Future nanoelectronics for nonvolatile memory elements require novel materials and devices that can switch logic states with a low power consumption, minimum heat dissipation, high-circuit density, fast switching speed, large endurance and long charge retention period. Herein, we report novel high resistance resistive switching in a polar beta-polyvinylidene fluoride (b-PVDF) and graphene oxide (GO) composite. A high resistance switching ratio was achieved without the realization of the essential current-filament forming condition mainly responsible for switching the device from high to low resistance states. b-PVDF is a well known ferroelectric/piezoelectric material which changes shape and size after application of an external electric field. We propose a model which describes how the present b-PVDF-GO composite changes shape after application of an external electric field (E) which provides a favorable environment for the formation of the current linkage path of GO in the PVDF matrix. The applied positive SET electric fields (+E) switch the composite from a high to a low resistance state, which further re-switches from a low to a high resistance state under negative RE-SET electric fields (ÀE). The positive and negative E-fields are responsible for the contraction and expansion of b-PVDF, respectively, redox reactions between GO and adsorbed water, oxygen migrations, and/or metal diffusion from the electrode to the b-PVDF-GO matrix. The above mentioned characteristics of the composite allows switching from one high resistance state to another high resistance state. The switching current lies below the range of 10-100 mA with an exceptionally high switching ratio, which meets one of the prerequisite criteria of low power nanoelectronics memristors.

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Nonvolatile resistive switching in graphene oxide thin films

Cited by 236 publications

References 37 publications

Reversible Electrical Reduction and Oxidation of Graphene Oxide

Reversible Electrical Reduction and Oxidation of Graphene Oxide

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Electroforming free high resistance resistive switching of graphene oxide modified polar-PVDF

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