Electroforming free high resistance resistive switching of graphene oxide modified polar-PVDF

Abstract

Future nanoelectronics for nonvolatile memory elements require novel materials and devices that can switch logic states with a low power consumption, minimum heat dissipation, high-circuit density, fast switching speed, large endurance and long charge retention period. Herein, we report novel high resistance resistive switching in a polar beta-polyvinylidene fluoride (b-PVDF) and graphene oxide (GO) composite. A high resistance switching ratio was achieved without the realization of the essential current-filament forming condition mainly responsible for switching the device from high to low resistance states. b-PVDF is a well known ferroelectric/piezoelectric material which changes shape and size after application of an external electric field. We propose a model which describes how the present b-PVDF-GO composite changes shape after application of an external electric field (E) which provides a favorable environment for the formation of the current linkage path of GO in the PVDF matrix. The applied positive SET electric fields (+E) switch the composite from a high to a low resistance state, which further re-switches from a low to a high resistance state under negative RE-SET electric fields (ÀE). The positive and negative E-fields are responsible for the contraction and expansion of b-PVDF, respectively, redox reactions between GO and adsorbed water, oxygen migrations, and/or metal diffusion from the electrode to the b-PVDF-GO matrix. The above mentioned characteristics of the composite allows switching from one high resistance state to another high resistance state. The switching current lies below the range of 10-100 mA with an exceptionally high switching ratio, which meets one of the prerequisite criteria of low power nanoelectronics memristors.

Exploring Surface and Tunneling Properties of Defect-Oriented Quasi-Graphene/Poly(vinylidene fluoride) Nanocomposite Films as Flexible 2D Materials for Electronic Applications

“…1−14 Indeed, chemistry and materials science, in particular, have played a pivotal role in the evolution of integrated circuits by enabling the development of active devices with distinct and reliable properties. 1−7 Of late, much attention has also been drawn into what is known as flexible electronics because of its portability, lightweight, and cost efficiency. Such unique features make it suitable for a wide range of applications, including robotics, sensors, displays, and tunable regulators.…”

Synthesis and optical and electrochemical memory properties of fluorene–triphenylamine alternating copolymer

“…The IR spectra were recorded on Magna-IR560 infrared spectrometers with KBr pellet from 400-4000 cm À1 . Nuclear magnetic resonance (NMR) spectra were recorded on a Bruker 400 spectrometer at a resonance frequency of 400 MHz for 1 H and 13 C NMR in deuterated chloroform. Thermal properties of the samples were measured using a Netzsch STA409 thermogravimetric analyzer at a heating rate of 10 C min À1 from 50 C to 750 C. The UV-vis absorption spectra measurements were carried out with a 756 CRT UV-Vis spectrophotometer.…”

“…In recent years, increasing attention has been paid to the application of organic materials in memory devices on account of their excellent properties. Large amounts of ORRAM devices have been fabricated using various organic materials, including polyimide (PI), 4 polyaniline (PAN), 5 polyvinylcarbazole (PVK), 6 polyuorene (PF), 7 poly(methyl methacrylate) (PMMA), 8 polyvinyl alcohol (PVA), 9 polystyrene (PS), 10 poly(3-hexylthiophene) (P3HT), 11 triphenylamine (TPA), 12 polyvinylidene uoride (PVDF), 13 as well as combinations of functional components. Among them, it is well-known that the PF and TPA were considered to be the most versatile and promising candidate for memory applications due to their outstanding properties.…”

Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

“…According to previous reports, GO has also been used as a material for RRAM. For composite GO-polymer materials, different GO mixing ratios will yield devices that exhibit adjustable resistance switching characteristics as a result of trapping and de-trapping of carriers in the GO [ 25 , 26 , 27 , 28 , 29 , 30 ]. Therefore, the electrical characteristics of devices can be modified by using various composite films or multi-layer structures.…”