Resistive Switching Behavior in Gelatin Thin Films for Nonvolatile Memory Application

Abstract

This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 10(6) and a long retention time of over 10(5) seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.

Effects of Electrode Materials on Charge Conduction Mechanisms of Memory Device Based on Natural Aloe Vera

“…The linear J-V relationships with slopes of close to 1 in the positive (Figure 1c,d) and negative (Figure 1e,f) regions indicate that Ohmic conduction is dominant in both ON-and OFF-state of the devices. These observations imply that the conduction mechanism is associated to the formation and rupture of a conductive filament [12][13][14][15][16][17][18][19][20] within the Aloe vera films. In contrast, the J-V characteristics of the device reported previously [11] depict three distinct regions in both positive and negative bias, which can be fitted with a combination of Ohm's and Child's law (OFF-state), and Child's law (ON-state), respectively, constituting the framework of SCLC theory.…”

“…In contrary, many reports [12][13][14][15][16][17][18][19][20] attribute the resistive switching behaviors in thin films of bio-organic materials to the formation and dissolution of a conductive filament bridging the top and bottom electrodes. The memory cells typically consist of an active (e.g.…”

Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

“…The development of RRAM has recently received increasing interest. Different materials with resistive switching characteristics, such as metal oxide [2], perovskite [3], polymer [4], or biomaterials [5], have been reported. Perovskite strontium titanate (STO) exerts a significant potential for RRAM applications; however, the switching performance remains unsatisfactory for the low current ON/OFF ratio [6].…”

Low-power resistive random access memory by confining the formation of conducting filaments

“…This I-V curve exhibits the characteristics of the trap-controlled space-charge-limited conducting mechanism, and the dominating trap sites are oxygen vacancies. [25][26][27] After setting the device to LRS, the I-V relation in the reversed voltage sweep (from -0.5 V to -0.01 V) is linear, implying that the conducting filaments are formed. In the continued voltage sweep from 0.01 V to 0.15 V, the device exhibits a linear I-V relation (Fig.…”