Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

Mahata, Chandreswar; Lee, Changmin; An, Youngseo; Kim, Min-Hwi; Bang, Suhyun; Kim, Chae Soo; Ryu, Jiho; Kim, Sungjun; Kim, Hyoungsub; Park, Byung‐Gook

doi:10.1016/j.jallcom.2020.154434

Cited by 64 publications

(33 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Currently, 2D thin film materials such as graphene and graphene oxide (GO) are also attracting increasing attention as candidates of electrode because of the excellent mobility of carriers and high thermal/electrical conductivity [15][16][17]. Compared with electrode thin film materials, more researchers focus on thin film materials applicated on RS medium, and inorganic materials are the main investigation objectives, including oxides and solid electrolyte, which will be discussed in Chapter 3 [11,[18][19][20][21][22][23][24][25][26][27].…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

“…In this review, we will present RRAM-related inorganic materials with oxides, solid electrolyte and two-dimensional (2D) materials. [9,20,75], NiO [8,12,76], TiO 2 [21,77,78], HfO 2 [60,79,80], ZnO [81][82][83], and ZrO 2 [22,84,85] are always playing main roles in materials application of RS medium. The first report of RS performance in binary metal oxides was proposed by Hickmott in 1962 [91], which demonstrated the RS characteristics of Al/Al 2 O 3 /Al device under the effect of an electric field.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

“…With the development of fabrication methods for electronic devices with thin films, binary metal oxides thin films fabricated by sputtering, ALD (atomic layer deposition) and solution-processed methods have received more interest due to their superior performance. Also, it is indicated that some researchers not only focus on RS layer fabricated with conventional pure binary metal oxides, but also explore effective ways of optimization treatment on metal-oxides-based RS layers, such as stack layers, ionic liquid (IL) process and nanoparticle (NP) doping process, and other similar treatment methods [8,20,32].…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

“…Mahata et al reported an RRAM device with ALD-based HfO 2 /Al 2 O 3 stack layers, which exhibited excellent performance with operation voltage lower than~2 V and the ON/OFF ratio around~10 3 . The TaN/HfO 2 /Al 2 O 3 /ITO RRAM device also presented neuromorphic synaptic behaviors with multi-level conductance properties by tuning the stop voltage in a DC sweep and the amplitude in pulse responses [20]. Shen et al presented various RRAM devices with solution-processed AlO x layers annealed at different temperatures [9].…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

See 3 more Smart Citations

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

show abstract

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

See 2 more Smart Citations

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Notably, the operating currents are significantly reduced despite increased pulse voltage amplitudes for SET and RESET processes in Ag/TiO 2 /ZrN/Si device. In the literature, for the phenomena in which the gradual characteristics are improved according to the additional layer insertion [ 38 , 39 ], the operation polarity change [ 40 ] and dielectric thickness control [ 41 ] of the device were reported.…”

Section: Resultsmentioning

confidence: 99%

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Choi

Kim

2020

Micromachines

Self Cite

View full text Add to dashboard Cite

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

show abstract

Copper (II) Phthalocyanine (CuPc) Based Optoelectronic Memory Device with Multilevel Resistive Switching for Neuromorphic Application

Das

Samanta

Sarkar

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

The 1D nanotubular organic semiconductor, copper (II) phthalocyanine (CuPc), embedded in poly‐methyl methacrylate (PMMA) is employed for the first time for multilevel resistive switching (RS) and neuromorphic applications. Single–double bonded planar CuPc tubes are synthesized via simple solvothermal methods and dispersed in the PMMA solution with different weight concentrations. The composite sample is deposited on an ITO coated transparent, flexible and conducting PET substrate to form Ag/CuPc@PMMA/ ITO device. I–V characterizations of the cell reveal a formation free, bipolar, non‐volatile, multilevel RS effect. The device shows a significantly large resistance ON/OFF ratio of 104, low threshold operating voltage (<2 V), large endurance (>104 cycles) and long retention time (>104 s) at room temperature. The multilevel resistive states are induced by visible light illumination. Based on the experimental data, the conduction mechanism of this type of RS memory device under the optical and the electrical impulse is attributed by the charge trapping and detrapping methods. The synaptic short‐term and long‐term potentiation are also studied on the device during the identical pulse training process. The proposed RS active material is a potential candidate for future artificial neural systems that simulate characteristics of human memory.

show abstract

Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

Cited by 64 publications

References 65 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Copper (II) Phthalocyanine (CuPc) Based Optoelectronic Memory Device with Multilevel Resistive Switching for Neuromorphic Application

Contact Info

Product

Resources

About