Resistive Intrinsic ZnO Films Deposited by Ultrafast Spatial ALD for PV Applications

Nandakumar, Naomi; Dielissen, B.; Garcia-Alonso, Diana; Liu, Zhe; Görtzen, R.; Kessels, W.M.M.; Aberle, Armin G.; Hoex, Bram

doi:10.1109/jphotov.2015.2438644

Cited by 15 publications

(21 citation statements)

References 43 publications

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“…Besides, these numbers refer to a single-chamber research-lab ALD and can be conceivably further reduced by using throughput-optimized ALD-machines or spatial-ALD systems. [21] We note, that the deposition rate of the 1 s purge time ALD-films is (within error bars) still the same as for 10 s long purge times, i.e., the processes still takes place within the ALDwindow. The latter aspect is also supported by SEM which yields an identical surface morphology for 1 s and 10 s ALD-films (images not shown here).…”

Section: Variations In Process Parametersmentioning

confidence: 51%

“…An ALD process that yields 100 nm ALD‐ZnO at 200 °C, which normally takes 3 hours in our machine, can be finished in 20 min by using the above mentioned process parameters with even better resistivities. Besides, these numbers refer to a single‐chamber research‐lab ALD and can be conceivably further reduced by using throughput‐optimized ALD‐machines or spatial‐ALD systems . We note, that the deposition rate of the 1 s purge time ALD‐films is (within error bars) still the same as for 10 s long purge times, i.e., the processes still takes place within the ALD‐window.…”

Section: Resultsmentioning

confidence: 87%

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Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Beh¹,

Hiller²,

Zacharias³

2018

Physica Status Solidi (a)

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Zinc oxide (ZnO) fabricated by atomic layer deposition (ALD) is a promising material to replace tin‐doped indium oxide (ITO) as standard transparent conductive oxide (TCO). However, its conductivity is still often about one order of magnitude below that of ITO. Variations in precursor choice, deposition process parameters, and post‐processing of ALD‐ZnO are tested concerning their impact in improvement of the TCO performance. Replacing the conventional diethylzinc (DEZ) with dimethylzinc (DMZ) as well as post‐deposition annealing in H2 yields no improvement for the highly conductive films (<10 mΩ cm) deposited at around 200 °C. However, reducing the purge time of the ALD process from 10 s down to 1 s and simultaneously increasing the DEZ pulse duration leads to a reduction in resistivity from 7.6 mΩ cm to 2.8 mΩcm. Furthermore, this process optimization involves a reduction of the total deposition time by almost one order of magnitude.

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Section: Variations In Process Parametersmentioning

confidence: 51%

Section: Resultsmentioning

confidence: 87%

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Beh¹,

Hiller²,

Zacharias³

2018

Physica Status Solidi (a)

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“…The peak can be attributed to the formation of excitons. Observing these excitonic features at room temperature (for films deposited within the ALD window) points out a high structural quality of these thin films . This property, combined with the significantly lower substrate temperature compared with other techniques (such as pulsed laser deposition) and the possibility to conformally coat complex structures, makes PE‐ALD an attractive deposition technique for functional optical devices .…”

Section: Resultsmentioning

confidence: 91%

ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”

Pilz

Perrotta

Leising

et al. 2019

Physica Status Solidi (a)

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ZnO thin films and nanostructures are applied in various devices due to their interesting optical and electrical properties. Atomic layer deposition (ALD) of ZnO offers unique advantages such as precise thickness control, uniformity, and conformality. Using reactive plasma species as the co-reactant (PE-ALD) allows further enhancement of the material characteristics and tunable properties. The substrate temperature has been reported to be the most influential parameter in this technique, as it affects the growth per cycle (GPC) and material properties. However, an investigation on how the film properties are linked to the GPC is lacking in the literature. Herein, the temperature dependence of several material properties is found closely related to the GPC. The preferential crystal orientation switches from (100) to (002) up to the constant region of the GPC versus temperature, the so-called ALD window. Refractive index and mass density show different slopes in temperature regions outside and within the ALD window. Excitonic absorption is only found for films prepared within the ALD window, and the resistivity drops rapidly above the ALD window. Following these results, more insights can be gained on the ALD growth (especially the role of the ALD window) and ideal temperature ranges for specific applications.

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“…While most early publications with the SoLayTec reactors have focused on Al 2 O 3 , 6 a recent publication details studies into ZnO. 42 The deposition conditions and growth rates are shown in Table I.…”

Section: Ap-sald Reactor Designsmentioning

confidence: 99%

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

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Resistive Intrinsic ZnO Films Deposited by Ultrafast Spatial ALD for PV Applications

Cited by 15 publications

References 43 publications

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

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