Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

“…Resistive random access memory (RRAM) is one of the most promising candidates for next-generation non-volatile memory applications due to its simple structure, low power consumption, high-speed operation, nondestructive readout, and high-density integration [1]. Many semiconducting and insulating materials including binary transition metal oxides, perovskite oxides, chalcogenides, sulfides, amorphous silicon, organic materials, and ferroelectric materials have been investigated extensively for RRAM applications [2], especially metal oxides such as Pr 1 − x Ca x MnO 3 [3,4], SrZrO 3 [5], STO [6], Nb 2 O 5 [7], NiO [8], ZrO 2 [9], SiO 2 [10], WO 3 [11], TiO 2 [12,13], Al 2 O 3 [14], ZnO [15], and HfO 2 [16-18]. …”

Effects of Zr and Ga doping on the stoichiometry and properties of niobium oxides

“…It is known that Nb forms different stable oxides such NbO, NbO 2 and Nb 2 O 5 , that exhibit very distinct electrical properties: NbO presents a typical metallic behaviour, Nb 2 O 5 is a wide band gap semiconductor (3.4-5.3 eV), and Nb 12 O 29 (which has a stoichiometry very close to Nb 2 O 5 ) can be a good transparent conductive oxide (TCO) [1][2][3][4][5]. More recently, niobium oxides have been explored for the development of resistive memories due to their resistive switching mechanisms based on the presence of oxygen vacancies [6][7][8][9][10][11][12][13][14].…”

“…For instance, this approach was used by Cava et al by doping Ta 2 O 3 with different ions, such as Al 3 þ [15], Zr 4 þ [16], Ti 4 þ [17], Si 4 þ [18] and B 3 þ [19]. Additionally, the Ta 2 O 5 doping with small amounts of TiO 2 has proven to enhance the dielectric constant of Ta 2 O 5 [7,10,11]. On the other hand, the use of Al 2 O 3 [15] as a doping agent does not lead to higher dielectric constant, but the temperature coefficient of dielectric constant (TCK) can be successfully decreased, which is an important requirement to most applications on microelectronic technology.…”

Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

“…Among these emerging next-generation memories, Resistive Random Access Memory (ReRAM), which exhibits drastic and reversible changes in the resistance state of the metal-oxide-metal (MOM) structure with the applied voltage, is considered to offer advantages for nextgeneration nonvolatile memory devices because of its good characteristics, such as low power consumption, high switching speed, and high integration density. 1,2 For ReRAM devices, a range of materials including metal-doped perovskites, such as Cr-doped SrTiO 3 , 3 colossal magneto-resistive switching materials like Pr 0.7 Ca 0.3 MnO 3 , 4 Ag-doped GeSe, 5 and binary oxide materials, such as TiO 2 , [6][7][8] NiO, 9,10 NB 2 O 5 , 11 CuO, 12 ZrO 2 , 13 ZnO, 14 and MnO, 15 have been studied extensively. Among these ReRAM materials, TiO 2 has attracted interest because of its high resistance difference between the high resistance state (HRS) and low resistance state (LRS), simple structure, and compatibility with conventional semiconductor processes.…”