Resistance Switching Behavior of a Perhydropolysilazane-Derived SiO_x-Based Memristor

Abstract

SiO x is an important dielectric material layer for resistive switching memory due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology. Here we propose a solution process for a SiO x dielectric layer based on perhydropolysilazane (PHPS). A series of SiO x layers with different compositions are prepared by controlling the conversion process from PHPS, then the resistance switching behaviors of typical Ag/SiO x /Au memristors are analyzed. The effect of oxygen vacancies and Si−OH groups on the formation and rupture of Ag conducting filaments (CFs) in the SiO x layer was thoroughly investigated. Ultimately, we achieved a high-performance memristor with a coefficient of variation (σ/μ) as low as 0.16 ± 0.08 and an on/off ratio as high as 10 6 , which can rival the performance of the SiO x memristors based on the highvacuum and high-cost vapor deposition methods. These findings demonstrate the high promise of the PHPS-derived SiO x dielectric layer in the field of memristors.

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

“…M emristors, featuring high nonlinearity, 1,2 low power consumption, 3,4 and continuously modulated conductance, 5,6 have made significant progress and breakthroughs ranging from memory-in logic, T-bit data storage, and bioinspired neuromorphic computing. 7−9 Memristive materials include three categories: oxides, 10,11 chalcogenides, 12,13 and organics.…”

Mechanism and Application of Capacitive-Coupled Memristive Behavior Based on a Biomaterial Developed Memristive Device

“…In order to more intuitively display the maximum HRS/LRS ratio under different scan voltage ranges, the relationship between the HRS/LRS ratio and the test voltage range is shown in Figure a. These parameters should be considered for the practical application of the memristor, including memory window, HRS/LRS ratio, and stability. , When the working voltage ranges from −1 to 1 V, the memory performance of sample D can meet the requirement of practical application. The first cycle I–V characteristic curve of sample D is shown in linear scale in Figure b, and the initial state (IS), HRS, and LRS of I–V characteristic curve were marked using different colors.…”

Ag/HfOx/Pt Unipolar Memristor for High-Efficiency Logic Operation

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“…In this work, a reliable URS behavior is realized using a simple Ag/HfO x /Pt memristor structure. The memristor displays a retention time of >10 4 s, an ON/OFF ratio of >10 3 , and a good operation voltage. Synergy and competition between the Ag conductive filament formed by redox reaction and the migration of an oxygen vacancy are responsible for the observed URS.…”