Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions

Lee, Eunsongyi; Gwon, Minji; Kim, Dong Wook; Kim, Hogyoung

doi:10.1063/1.3567755

Cited by 41 publications

(63 citation statements)

References 13 publications

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“…6c. In some prior studies, other techniques such as internal optical excitation 19 have been employed for the evaluation of the barrier height at apparent Pt/NSTO junctions, and the reported SHB was around 1 eV. The built-in potential values of SJ-B and SJ-C P247 determined by SX-PES were close to the reported SBH values at the NSTO junctions showing RS behavior.…”

Section: Resultssupporting

confidence: 63%

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

Hirose

Yoshikawa

Yanagi

et al. 2014

ECS J. Solid State Sci. Technol.

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The current transport properties and resistance-switching (RS) behavior at platinum/niobium-doped strontium-titanate (Pt/NSTO) Schottky junctions were investigated for junctions with different degrees of oxidation (PtO x ) in the Schottky electrode. It was found that the rectifying current-voltage (I-V) profile strongly depends on the heat-treatment of the NSTO crystal and oxidation of the Pt electrode. The hysteresis in the I-V relationships was larger for the PtO x /NSTO junction than for the pure Pt/NSTO junction, and heat-treatment of the NSTO crystal suppresses the hysteresis in I-V and increases the leakage current. The change in the rectifying I-V profiles can be reasonably explained by the increase in the built-in potential caused by partial oxidation of the electrode interface, as determined by soft X-ray photoemission spectroscopy. The experimental results indicate that control of the built-in potential and the partial oxidation of the electrode, which affects the homogeneity of the potential profile, is the key to improving and controlling the rectification and RS properties in Pt/NSTO junctions.Colossal electroresistance (CER) phenomena, i.e., the immense changes in electric resistance induced by applying electric fields, 1 have been observed in many metal/insulator/metal (MIM) structures including titanium oxide sandwiched by metal electrodes 2 and metal/semiconductor (MS) Schottky junction structures such as niobium-doped strontium titanate (NSTO) with a platinum (Pt) electrode. 3 One typical consequence of the CER effect is the so-called resistance-switching (RS) behavior, which is defined as a reversible change in the electronic resistance between the high-resistance state (HRS) and low-resistance state (LRS) upon application of an electric field such as a pulsed bias. What is unique about the RS behavior is that the HRS and LRS remain even after removal of the electric bias applied for switching. For this reason, RS behavior is of interest for the development of nonvolatile random access memory (NVRAM) cells. 2,4 Although the RS behavior of metal/NSTO junctions is interesting in terms of both physics and electronics, several technical problems remain. The most significant problem is poor reproducibility of the properties of metal/NSTO junctions. In particular, the appearance of RS behavior strongly depends on the sample preparation procedures. 5 Obvious hysteresis in the current-voltage (I-V) curves (RS behavior) of metal/NSTO junctions have been reported in some papers, 3,6 but, in contrast, no trace of RS behavior was found at the metal/NSTO junctions reported in other papers. 7,8 Another problem is that the RS speed and resistance retention properties are poor compared with those of conductive-filament-type RS devices. 9,10 In particular, a long pulse voltage is needed to obtain a large resistance change, and the resistance state cannot be memorized for long in metal/NSTO junctions. Therefore, for practical application of RS devices, we need to clarify the material and process parameters gover...

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Section: Resultssupporting

confidence: 63%

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

Hirose

Yoshikawa

Yanagi

et al. 2014

ECS J. Solid State Sci. Technol.

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“…The increase in n and the lowering of φ B on switching the junction to the LRS are generally observed for this type of resistive switching memory. It has been ascribed to barrier inhomogeneity811181920, because the global φ B as measured in photocurrent experiments is insensitive to resistive switching1921.…”

Section: Resultsmentioning

confidence: 99%

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

et al. 2014

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Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.

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“…Recently, however, remarkable hysteretic behaviors are also observed in many specially-engineered Schottky junctions, and the nonvolatile memory based on metal-oxide junction has been attracting increasing attentions due to their potentials for next-generation nonvolatile memory devices567891011. Under a pulsed voltage of different polarity, the junction demonstrates a reversible switching between nonvolatile high resistance state (HRS) and low resistance state (LRS)11.…”

mentioning

confidence: 99%

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

Yan

Liu

2013

Sci Rep

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The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.

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Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions

Cited by 41 publications

References 13 publications

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

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