Resist outgassing contamination growth results using both photon and electron exposures

Denbeaux, Gregory; Kandel, Yudhishthir; Kane, Genevieve A.; Alvardo, Diego; Upadhyaya, Mihir; Khopkar, Yashdeep; Friz, Alexander; Petrillo, Karen; Sohn, Jeongwon; Sarma, Chandra; Ashworth, Dominic

doi:10.1117/12.2011606

Cited by 8 publications

(5 citation statements)

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“…(vii) However, in the case of FE-SPL, the space between the electron emitter (tip apex) and the resist-coated sample surface is not field-free. The low energy electrons emitted from the nano-tip regain energy from the field after losing energy due to inelastic scattering events [12,[33][34][35][69][70][71][72][73]. (viii) From a theoretical point of view, thermal effects can be excluded in FE-SPL.…”

Section: The Principle Of Exposure With Low-energy Electrons Using a ...mentioning

confidence: 99%

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Kaestner

Rangelow

2020

Int. J. Extrem. Manuf.

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Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.

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Section: The Principle Of Exposure With Low-energy Electrons Using a ...mentioning

confidence: 99%

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Kaestner

Rangelow

2020

Int. J. Extrem. Manuf.

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“…The witness sample based resist outgas testing at SEMATECH incorporates wafer coating and thickness measurement, exposure using a commercial system EUV Tech outgas tester [4] for E0 determination and contamination growth (CG) measurement on the witness sample. If the thickness of the contamination film grown on the witness sample passes the cleanable specification (≤10 nm), it will be cleaned using a hydrogen cleaning system [5]. XPS analysis is used to verify all of the contamination growth has been removed after hydrogen cleaning.…”

Section: Resist Outgas Testingmentioning

confidence: 99%

First results of outgas resist family test and correlation between outgas specifications and EUV resist development

Fan¹,

Maruyama

Ayothi

et al. 2015

SPIE Proceedings

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In this paper, we present the first results of witness sample based outgas resist family test to improve the efficiency of outgas testing using EUV resists that have shown proven imaging performance. The concept of resist family testing is to characterize the boundary conditions of outgassing scale from three major components for each resist family. This achievement can significantly reduce the cost and improve the resist outgas learning cycle. We also report the imaging performance and outgas test results of state of the art resists and discuss the consequence of the resist development with recent change of resist outgassing specifications. Three chemically amplified resists selected from higher outgassing materials are investigated, but no significant improvement in resist performance is observed.

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“…Specifically we carried out experiments to improve the process latitude of using electron beams to study the outgassing effect of extreme ultraviolet (EUV) lithography photoresists, for which work can be found elsewhere. [8][9][10] Typically, in an external observation, material response and electron beam shape effects are coupled. Our setup uses experimental results of exposure of thin film of photoresist with multiple static exposures and their thickness maps.…”

Section: Introductionmentioning

confidence: 99%

Simultaneous determination of electron beam profile and material response using self-consistent iterative method

Kandel¹,

Denbeaux²

2016

Jpn. J. Appl. Phys.

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We develop a novel iterative method to accurately measure electron beam shape (current density distribution) and monotonic material response as a function of position. A common method is to scan an electron beam across a knife edge along many angles to give an approximate measure of the beam profile, however such scans are not easy to obtain in all systems. The present work uses only an electron beam and multiple exposed regions of a thin film of photoresist to measure the complete beam profile for any beam shape, where the material response is characterized externally. This simplifies the setup of new experimental tools. We solve for self-consistent photoresist thickness loss response to dose and the electron beam profile simultaneously by optimizing a novel functional iteratively. We also show the successful implementation of the method in a real world data set corrupted by noise and other experimental variabilities.

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Resist outgassing contamination growth results using both photon and electron exposures

Cited by 8 publications

References 0 publications

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

First results of outgas resist family test and correlation between outgas specifications and EUV resist development

Simultaneous determination of electron beam profile and material response using self-consistent iterative method

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