Resist Modeling Near Resolution And Sensitivity Limits In X -Ray Lithography

Abstract

The impact of statistical fluctuations due to the finite number of quanta absorbed during the exposure of highspeed X-ray photoresists on photoresist development and lithographic structure transfer is examined. Evidence for percolation processes during photoresist development is provided, and theoretical models are presented in the form of a Monte -Carlo type computer experiment, and a statistical analysis of surface clusters by means of a simple continuous -space percolation model. Finally achievable structure transfer is analyzed in terms of the optical and statistical components of the normalized process parameter NPL.