Percolation theory and resist development in x-ray lithography

Oertel, H.; Weiss, M.; Dammel, Ralph R.; Theis, J.

doi:10.1016/0167-9317(90)90112-7

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…Numerous approaches have been taken to understand photoresist polymer dissolution through the application of percolation models, − the investigation of interfacial reaction kinetics, the development of a surface-etching critical ionization model, , and the combination of reaction kinetics with a critical ionization model. , These studies focused on the kinetics of the dissolution process and have highlighted the influence of the polymer molecular weight and developer pH, especially with regard to correlations to surface roughening. These models and experiments were developed primarily for a previous generation of photoresist materials that did not swell during development but dissolved in a manner similar to an etching process.…”

Section: Introductionmentioning

confidence: 99%

Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

et al. 2006

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The response of unentangled polymer thin films to aqueous hydroxide solutions is measured as a function of increasing weakly acidic methacrylic acid comonomer content produced by an in situ reaction-diffusion process. Quartz crystal microbalance with energy dissipation and Fourier transform infrared spectroscopy measurements are used to identify four regimes: (I) nonswelling, (II) quasiequilibrium swelling, (III) swelling coupled with partial film dissolution, and (IV) film dissolution. These regimes result from chemical heterogeneity in local composition of the polymer film. The acid-catalyzed deprotection of a hydrophobic group to the methacrylic acid tends to increase the hydrophilic domain size within the film. This nanoscale structure swells in aqueous base by ionization of the methacrylic acid groups. The swollen film stability, however, is determined by the hydrophobic matrix that can act as physical cross-links to prevent dissolution of the polyelectrolyte chains. These observations challenge current models of photoresist film dissolution that do not include the effects of swelling and partial film dissolution on image quality.

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Section: Introductionmentioning

confidence: 99%

Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

et al. 2006

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Novolak‐Diazoquinone Resists: The Imaging Systems of the Computer Chip

Reiser¹,

Shih²,

Yeh

et al. 1996

Angew. Chem. Int. Ed. Engl.

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Si02 + 4 HF -+ SiF4 + 2H20S o m e of the fundamental steps of microlithography (coating, irradiation, development of the film with base, removal of the Si02 layer) and on the right the chemical processes involved. This year some twenty billion integrated circuits will be produced worldwide. Almost all (98%) of them will be made with a photosensitive varnish, the photo resist, that allows the transfer of a fine line-pattern from an original transparency onto a silicon wafer. This photoresist has two components: one is a novolak resin, a low molecular weight phenol-formaldehyde condensation polymer; the other is a diazonaphthoquinone derivative (DNQ), which is the photoactive part of the system. Novolak-diazoquinone resists have played a crucial role in the microminiaturization of electronics. They are photographic materials of extremely high resolution, able to define features as small as 0.25pm. Although they are now an indispensible ingredient of modern computer technology, until quite recently their molecular mechanism was not understood. We report here on work at Polytechnic University in New York aimed at solving the mystery of these important and intriguing systems. The solution, in so far as it has revealed itself to us, is rather unique and quite unexpected. Novolak-Diazoquinone Resists

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Characterization of AZ PN114 resist for soft-x-ray projection lithography

et al. 1993

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Using 14-nm wavelength illumination, we have imaged 0.1-µm-wide lines and spaces in single-layer thin films of the highy sensitive, negative, chemically amplified resist AZ PN114 by usingboth a Schwarzschild 20× camera and an Offner ring field 1× optical system. For soft-x-ray projection lithography the approximate 0.2-µm absorption length in resists at 14-nm wavelength necessitates a multilayer resist system. To explore further the requirements of the imaging layer of such a system, we have transferred patterns, exposed by a high-resolution electron beam in a 60-nm-thick layer of AZ PN114, into the underlying layers of a trilevel structure. Significant pattern edge noise and resist granularity were found. It remains to be determined whether the observed noise is dominated by statistical fluctuations in dose or by resist chemistry. We also investigated pinhole densities in these films and found them to increase from 0.2 cm(-2) for 380-mm-thick films to 15 cm(-2) for 50-nm-thick films.

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Percolation theory and resist development in x-ray lithography

Cited by 4 publications

References 6 publications

Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

Novolak‐Diazoquinone Resists: The Imaging Systems of the Computer Chip

Characterization of AZ PN114 resist for soft-x-ray projection lithography

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