Resist-based neutral atom lithography

Thywissen, Joseph H.; Johnson, K. S.; Younkin, R.; Dekker, Nynke H.; Berggren, K. K.; Chu, A.; Prentiss, Mara

doi:10.1364/seo.1998.cb4

Cited by 3 publications

(3 citation statements)

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“…However, this method is surface-bound and can have only limited applications. Matter wave such as neutral atom or ion can also be used to print ultrasmall feature due to their ultrashort de Broglie wavelength [30][31][32]. However, the line period generated in matter wave lithography is also bound to half wavelength of the light source.…”

Section: Introductionmentioning

confidence: 99%

Suppression of quantum noises in coherent atom lithography through squeezing

et al. 2018

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The Abbe's diffraction limit restricts the resolution of an optical imaging and lithography system. Coherent Rabi oscillation is shown to be able to overcome the diffraction limit in both optical and atom lithography. In previous studies, semiclassical theory is applied where the driving field is treated as a classical light and quantum fluctuation is neglected. Here, we show that the quantum fluctuation may reduce the visibility of the superresolution pattern. However, by squeezing the photon number fluctuation we are able to significantly increase its visibility.

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Section: Introductionmentioning

confidence: 99%

Suppression of quantum noises in coherent atom lithography through squeezing

et al. 2018

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“…Since the first demonstrations, a number of extensions of the process have been investigated, including two-dimensional patterning[ 8 , 9 ], patterning at one fourth the pitch[ 10 ], etching the pattern into the substrate[ 11 ], and beating of two nearly equal patterns to form a long-period artifact[ 12 ]. Some metrological aspects of the process have also been discussed[ 13 ]. A general review of nanofabrication with atom optical techniques can be found in reference [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

Accuracy of nanoscale pitch standards fabricated by laser-focused atomic deposition

McClelland¹,

Anderson²,

Bradley³

et al. 2003

J. Res. Natl. Inst. Stand. Technol.

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The pitch accuracy of a grating formed by laser-focused atomic deposition is evaluated from the point of view of fabricating nanoscale pitch standard artifacts. The average pitch obtained by the process, nominally half the laser wavelength, is simply traceable with small uncertainty to an atomic frequency and hence can be known with very high accuracy. An error budget is presented for a Cr on sapphire sample, showing that a combined standard uncertainty of 0.0049 nm, or a relative uncertainty of 2.3 × 10−5, is readily obtained, provided the substrate temperature does not change. Precision measurements of the diffraction of the 351.1 nm argon ion laser line from such an artifact are also presented. These yield an average pitch of (212.7777 ± 0.0069) nm, which agrees well with the expected value, as corrected for thermal contraction, of (212.7705 ± 0.0049) nm.

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“…Το πρόβλημα του ελέγχου των κρίσιμων διαστάσεων είναι μείζονος σημασίας , ιδιαίτερα σήμερα που η τεχνολογία προχωρά προς στην μαζική κατασκευή δομών με χαρακτηριστική διάσταση τα lOOnm [Ferry D.K., 1996], [Bloomstein Τ.Μ., 1997], [Chatteijee P., 1998], [Marian R.K., 1992], [McCord M.A., 1997], [Rohrer H., 1998], [Thywissen J.H., 1997].…”

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Θεωρητική Και Πειραματική Μελέτη Μηχανισμών Διάχυσης - Αντίδρασης Και Σχηματισμού Αδιάλυτου Πλέγματος Σε Ρητίνες Ηλεκτρονικής Λιθογραφίας

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Resist-based neutral atom lithography

Cited by 3 publications

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Suppression of quantum noises in coherent atom lithography through squeezing

Suppression of quantum noises in coherent atom lithography through squeezing

Accuracy of nanoscale pitch standards fabricated by laser-focused atomic deposition

Θεωρητική Και Πειραματική Μελέτη Μηχανισμών Διάχυσης - Αντίδρασης Και Σχηματισμού Αδιάλυτου Πλέγματος Σε Ρητίνες Ηλεκτρονικής Λιθογραφίας

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