Residual stresses in nitride hard coatings prepared by magnetron sputtering and arc evaporation

Oettel, H.; Wiedemann, Renate; Preißler, S.

doi:10.1016/0257-8972(95)08235-2

Cited by 122 publications

(56 citation statements)

References 11 publications

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“…In conventional dc magnetron sputtering (DCMS), reported AlN kinetic solubility limits in cubic alloys are typically xmax ≃ 0.50 at film growth temperatures Ts = 500 °C, 1,2 while xmax values up to 0.66 have been reported using cathodic arc evaporation 3 with a substrate bias of -100 V. 4 However, both sets of films exhibit extremely high compressive stresses ranging up to -5 GPa for DCMS 5 and -9.1 GPa for arc-deposited films. 6 There is a large literature on the use of rare-gas ion bombardment of the growing film during low-temperature sputter deposition in order to increase film density, 7,8,9 improve film/substrate adhesion via interfacial mixing, 10,11,12,13 enhance crystallinity and control texture through collisionally-enhanced adatom mean free paths, 14,15,16 form metastable phases through ion-irradiation-induced near-surface mixing, 17,18,19 etc.…”

Section: Introductionmentioning

confidence: 99%

A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering

Greczyński

Jensen

et al. 2014

Surface and Coatings Technology

145

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We review results on the growth of metastable Ti1-xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al + ion irradiation during Al-HIPIMS/Ti-DCMS at 500 C, with a negative substrate bias Vs = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar + ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1-xAlxN films (x ≤ 0.60) with high hardness (> 30 GPa with x > 0.55) and low stress (0.2-0.8 GPa compressive). Ar + ion bombardment can be further suppressed in favor of predominantly Al + ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al-HIPIMS pulse. In distinct contrast, Ti-HIPIMS/Al-DCMS Ti1-xAlxN layers grown with Ti + /Ti 2+ metal ion irradiation and the same HIPIMS-synchronized Vs value, are two-phase mixtures, NaCl-structure Ti1-xAlxN plus wurtzite AlN, exhibiting low hardness (≃18 GPa) with high compressive stresses, up to -3.5 GPa. In both cases, film

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Section: Introductionmentioning

confidence: 99%

A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering

Greczyński

Jensen

et al. 2014

Surface and Coatings Technology

145

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“…8,9 However, the resulting films have very high compressive stresses ranging up to -5 GPa (ref. 10) for DCMS and -9.1 GPa (ref. 11) for arc-deposited films.…”

Section: Introductionmentioning

confidence: 99%

Role of Tin+ and Aln+ ion irradiation (n=1, 2) during Ti1-xAlxN alloy film growth in a hybrid HIPIMS/magnetron mode

Greczyński

Johansson

et al. 2012

Surface and Coatings Technology

129

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Metastable Ti 1-x Al x N (0.4 ≤ x ≤ 0.76) films are grown using a hybrid approach in which high-power pulsed magnetron sputtering (HIPIMS) is combined with dc magnetron sputtering (DCMS). Elemental Al and Ti metal targets are co-sputtered with one operated in HIPIMS mode and the other target in DCMS; the positions of the targets are then switched for the next set of experiments. In both cases, the AlN concentration in the co-sputtered films, deposited at T s = 500 °C with R = 1.5-5.3 Å/s, is controlled by adjusting the average DCMS target power. Resulting films are analyzed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, elastic recoil detection analysis, and nanoindentation.Mass spectroscopy is used to determine ion energy distribution functions at the substrate. The distinctly different flux distributions obtained from targets driven in HIPIMS vs. DCMS modes allow the effects of Al n+ and Ti n+ (n = 1, 2) ion irradiation on film growth kinetics, and resulting properties, to be investigated separately. Bombardment with Al n+ ions (primarily Al + in the Al-HIPIMS/Ti-DCMS configuration) during film growth leads to NaCl-structure Ti 1-x Al x N (0.53 ≤ x ≤ 0.60) films which exhibit high hardness (> 30 GPa) with low stress (0.2 -0.7 GPa tensile). In contrast, films with corresponding AlN concentrations grown under Ti n+ metal ion irradiation (with a significant Ti 2+ component) in the Ti-HIPIMS/Al-DCMS mode have much lower hardness, 18-19 GPa, and high compressive stress ranging up to 2.7 GPa. The surprisingly large variation in mechanical properties results from the fact that the kinetic AlN solubility limit x max in 2 Ti 1-x Al x N depends strongly on, in addition to T s and R, the target power configuration during growth and hence the composition of the ion flux. AlN with x max  64 mol% can be accommodated in the NaCl structure under Al n+ ion flux, compared with  40 mol% for growth with Ti n+ flux. The strong asymmetry in film growth reaction paths is due primarily to the fact that the doubly-ionized metal ion flux is approximately two orders of magnitude higher from the Ti target, than from Al, powered with HIPIMS. This asymmetry becomes decisive upon application of a moderate substrate bias voltage, -60 V, applied synchronously with HIPIMS pulses, during growth.

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“…N þ c-TiN). These peaks are shifted to higher angles when annealed at 800 C which indicate stress relaxation and crystal recovery processes (such as annihilation of defects including interstitials of metallic species, nitrogen atoms, and vacancies expected to be present in arc evaporated coatings 40 ). There are two contributing factors for the appearance of superlattice reflections at 800 and 900 C, seen for example at 2h % 36.1 .…”

Section: Resultsmentioning

confidence: 99%

Coherency strain engineered decomposition of unstable multilayer alloys for improved thermal stability

Forsén

Ghafoor

Odén

2013

Journal of Applied Physics

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A concept to improve hardness and thermal stability of unstable multilayer alloys is presented based on control of the coherency strain such that the driving force for decomposition is favorably altered. Cathodic arc evaporated cubic TiCrAlN/Ti 1Àx Cr x N multilayer coatings are used as demonstrators. Upon annealing, the coatings undergo spinodal decomposition into nanometer-sized coherent Ti-and Al-rich cubic domains which is affected by the coherency strain. In addition, the growth of the domains is restricted by the surrounding TiCrN layer compared to a non-layered TiCrAlN coating which together results in an improved thermal stability of the cubic structure. A significant hardness increase is seen during decomposition for the case with high coherency strain while a low coherency strain results in a hardness decrease for high annealing temperatures. The metal diffusion paths during the domain coarsening are affected by strain which in turn is controlled by the Cr-content (x) in the Ti 1Àx Cr x N layers. For x ¼ 0 the diffusion occurs both parallel and perpendicular to the growth direction but for x > ¼0.9 the diffusion occurs predominantly parallel to the growth direction. Altogether this study shows a structural tool to alter and fine-tune high temperature properties of multicomponent materials. V C 2013 AIP Publishing LLC. [http://dx

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Residual stresses in nitride hard coatings prepared by magnetron sputtering and arc evaporation

Cited by 122 publications

References 11 publications

A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering

A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering

Role of Tin+ and Aln+ ion irradiation (n=1, 2) during Ti1-xAlxN alloy film growth in a hybrid HIPIMS/magnetron mode

Coherency strain engineered decomposition of unstable multilayer alloys for improved thermal stability

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