Residual stress of glass and crystalline oxide thin films responding to humidity

Abstract

Here, we demonstrate that oxide thin film devices could be affected by humidity in their in-plane stress and in substrate curvature. We prepared silica glass and ceria crystalline thin films on Si(100) wafers by the sol-gel method. Both films had “tensile” in-plane residual stress. We cycled the relative humidity between ca. 20% and 80% in the square wave and monitored the substrate curvature in situ, from which in-plane stress was calculated. The increase and decrease in humidity resulted in a decrease and an increase in tensile stress, respectively. In situ ellipsometric measurements during humidity cycles showed that both thickness and refractive index increase and decrease on the increase and decrease in humidity, respectively. This guarantees that the volume expansion and shrinkage caused by water molecule adsorption/absorption and desorption, respectively, are the origins of the response of the stress to humidity. Responding to the change in humidity, thicker silica glass films with low porosities of 1%–3% showed more sluggish change in stress, suggesting absorption/desorption of water via diffusion in siloxane network in such dense films. Silica glass films with a larger porosity showed more quick response to humidity, indicating adsorption/desorption on the pore wall as the primary cause of the response. “Compressive” stress in a silica glass film with ca. 1% porosity exhibited very slight response in stress to humidity, which was attributed to the hard diffusion of water in compressed siloxane network.