Residual-based pattern center calibration in high-resolution electron backscatter diffraction

Zhong, Hongru; Shi, Qiwei; Chen, Zhe; Dan, Chengyi; Zhong, Shengyi; Wang, Haowei

doi:10.1016/j.micron.2021.103081

Cited by 9 publications

(3 citation statements)

References 24 publications

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“…These values can result in similar changes of absolute lattice parameters and strain when these are determined based on simulations that neglect E/D effect. Results of some recent numerical simulation studies concerning a potentially very high precision projection centre and strain determination 14,30,125 are thus difficult to transfer directly to a correspondingly high precision in realistic experimental situations because excess-deficiency effects have not been accounted for in the underlying theoretical model of these studies. Optical distortions will be an additional source of error that would need to be treated in highresolution pattern matching studies.…”

Section: Discussionmentioning

confidence: 99%

Kikuchi pattern simulations of backscattered and transmitted electrons

Winkelmann

Nolze

Cios

et al. 2021

Journal of Microscopy

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We discuss a refined simulation approach which treats Kikuchi diffraction patterns in electron backscatter diffraction (EBSD) and transmission Kikuchi diffraction (TKD). The model considers the result of two combined mechanisms: (a) the dynamical diffraction of electrons emitted coherently from point sources in a crystal and (b) diffraction effects on incoherent diffuse intensity distributions. Using suitable parameter settings, the refined simulation model allows to reproduce various thickness‐ and energy‐dependent features which are observed in experimental Kikuchi diffraction patterns. Excess‐deficiency features are treated by the effect of gradients in the incoherent background intensity. Based on the analytical two‐beam approximation to dynamical electron diffraction, a phenomenological model of excess‐deficiency features is derived, which can be used for pattern matching applications. The model allows to approximate the effect of the incident beam geometry as a correction signal for template patterns which can be reprojected from pre‐calculated reference data. As an application, we find that the accuracy of fitted projection centre coordinates in EBSD and TKD can be affected by changes in the order of 10−3–10−2 if excess‐deficiency features are not considered in the theoretical model underlying a best‐fit pattern matching approach. Correspondingly, the absolute accuracy of simulation‐based EBSD strain determination can suffer from biases of a similar order of magnitude if excess‐deficiency effects are neglected in the simulation model.

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Section: Discussionmentioning

confidence: 99%

Kikuchi pattern simulations of backscattered and transmitted electrons

Winkelmann

Nolze

Cios

et al. 2021

Journal of Microscopy

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“…The influence of the PC is a well discussed problem in all high-precision electron backscatter diffraction (EBSD) techniques and it is therefore a recurring topic in the literature [see e.g. Britton et al (2010), Maurice et al (2011), Basinger et al (2011), Alkorta (2013), , Pang et al (2019), Winkelmann et al (2020Winkelmann et al ( , 2021, Zhong et al (2021) and Shi et al (2021)]. The PC is only exactly known for a projection of simulated BKD patterns, so this error is just as irrelevant as that for trace positions.…”

Section: Projection Centrementioning

confidence: 99%

Use of electron backscatter diffraction patterns to determine the crystal lattice. Part 1. Where is the Bragg angle?

Nolze¹,

Tokarski²,

Rychłowski³

2023

J Appl Cryst

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The derivation of a crystal structure and its phase-specific parameters from a single wide-angle backscattered Kikuchi diffraction pattern requires reliable extraction of the Bragg angles. By means of the first derivative of the lattice profile, an attempt is made to determine fully automatically and reproducibly the band widths in simulated Kikuchi patterns. Even under such ideal conditions (projection centre, wavelength and lattice plane traces are perfectly known), this leads to a lattice parameter distribution whose mean shows a linear offset that correlates with the mean atomic number Z of the pattern-forming phase. The consideration of as many Kikuchi bands as possible reduces the errors that typically occur if only a single band is analysed. On the other hand, the width of the resulting distribution is such that higher image resolution of diffraction patterns, employing longer wavelengths to produce wider bands or the use of higher interference orders is less advantageous than commonly assumed.

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“…The EBSD dataset of a commercial Si wafer, first reported in Ref. [39], is used again to characterize the accuracy of IDIC and IDIC-E indexation. The sample does not show regular engravings on its surface.…”

Section: Improved Indexation Accuracy Of a Si Wafermentioning

confidence: 99%