RESET failure analysis of phase change memory based on Ge&lt;sub&gt;2&lt;/sub&gt;Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;5&lt;/sub&gt;

Wang, Yuchan; Wang, Yuhan; Chen, Xiaogang; Li, Xiaoyun

doi:10.1587/elex.14.20170673

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…1. Alloys along this line exhibit fast switching and pronounced electrical/optical contrast between amorphous and crystalline phases [8], which is exemplified by the most well-known PCM -Ge 2 Sb 2 Te 5 (GST) [9,10]. Other PCMs in addition to GST, such as Ag/In doped Sb 2 Te alloys, enabled faster switching speed due to their growthdominated crystallization [11].…”

Section: Storage Materials and Design Principlesmentioning

confidence: 99%

Blade-type phase-change random access memory technology, challenge and prospect

Xie,

Wang,

Chen

et al. 2023

IEICE Electron. Express

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Blade-type phase-change random access memory (PCRAM) has recently become one promising candidate to compete with conventional PCRAM devices for next generation on-chip storage. This can be ascribed to its sharp contact region at heater-phase change layer interface, significantly lowering resulting energy consumption. However, a comprehensive review concerning the physical principles, current status, and possible improvements of blade-type PCRAM is still missing. To address this issue, here we first reviewed common phase-change materials for storage applications and physical principles of blade-type PCRAM. Subsequently, the current status of blade-type PCRAM from both experimental and theoretical perspectives was described as well as the performances comparison with conventional PCRAM. Possible approaches to overcome the technical challenges of blade-type PCRAM and its future prospect were eventually discussed.

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Section: Storage Materials and Design Principlesmentioning

confidence: 99%

Blade-type phase-change random access memory technology, challenge and prospect

Xie,

Wang,

Chen

et al. 2023

IEICE Electron. Express

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“…On the contrary, C is responsible for an improved endurance up to more than 10 8 cycles if compared to standard GST that start to fail after 10 6 cycles. Moreover C-GST shows a better RESET state stability along cycling, while material evolution is evidenced in standard GST already after 10 4 cycles [11]. It should be noted that no intelligent or optimized endurance procedures were applied voluntarily, in order to compare the behavior of the two materials with same cycling conditions.…”

Section: Endurance and Retention Analysesmentioning

confidence: 99%

Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays

Bourgeois

Meli

Mamun

et al. 2021

Microelectronics Reliability

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In this paper we investigate the effect of Carbon ion implantation in Ge2Sb2Te5 based Phase-Change Memory (PCM) targeting reliability improvement in 4kb memory arrays. We show how ion implantation by beam line allows to localize the Carbon in a specific volume of the active layer, demonstrating that a low C concentration (lower than 5 at. %) can be achieved with a high control thanks to dose monitoring. We evidence an outstanding improvement of the PCM cell performances, in both single devices and 4kb arrays, such as programming window widening and reduced variability of electrical parameters. We support our findings by TEM/EDS analyses demonstrating the healing effects of C ion implantation on interfaces and on retarding the phase-change layer segregation mechanisms.

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