Research on optimization design of high efficient low noise SiC-MOSFETs inverters

Yamaguchi, Koji; Katsura, Kenshiro

doi:10.1109/icpe.2015.7167968

Cited by 12 publications

(5 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The analysis of the state of the field reports a number of existing solutions in the technical literature. These solutions address the main distinctive features in the switching phenomena found in SiC MOSFET devices [68][69][70][71][72][73], that have been discussed above. Some authors propose active gate drivers, which allow for varying the total gate resistance of the driver, R G , to be considered as one of the most promising techniques [74].…”

Section: Packagingmentioning

confidence: 95%

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

et al. 2021

View full text Add to dashboard Cite

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

show abstract

Section: Packagingmentioning

confidence: 95%

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

et al. 2021

View full text Add to dashboard Cite

show abstract

“…A comprehensive evaluation of the effects of removing the antiparallel SiC SBDs has been described in (26). Table 3 shows a summary of the advantages and disadvantages of removing the antiparallel SiC SBDs.…”

Section: Characteristics Of Inverters Without Sbdsmentioning

confidence: 99%

High Power Density SiC-Based Inverter with a Power Density of 70kW/liter or 50kW/kg

et al. 2019

View full text Add to dashboard Cite

This paper presents a high power density silicon carbide (SiC)-based inverter, with a two-level voltage-source structure having forced air cooling, which provides a high volumetric power density of 70 kW/liter or 50 kW/kg in gravimetric terms. In order to achieve a power density greater than that of conventional inverters, the losses must be reduced or the cooling performance must be improved. Small lightweight SiC MOSFET power modules with directly soldered foil fins having good thermal conductivities, are developed in this study. The antiparallel SiC Schottky barrier diodes (SBDs) are removed from the modules to improve the power density. Gate drivers are developed to reduce the switching losses and switching time. A prototype of the proposed high power density inverter, which includes the developed power modules and proposed gate driver, is fabricated. The volume and weight of the prototype inverter are approximately 0.5 liter and 660 g, respectively. Experimental results confirm that the prototype inverter can operate continuously with an output power up to 35 kW. Therefore, the power density of the prototype inverter is approximately 70 kW/liter or 50 kW/kg. The efficiency of the prototype inverter is found to be more than 98%. Hence, the measures undertaken in this study have been verified to improve the power density of the inverters. The proposed high power density inverters can be applied in future aircraft and other electric vehicles.

show abstract

“…τ2 for the proposed gate driver is calculated with (9), where Rg' is the internal gate resistance of the SiC-MOSFETs. The time constant for the conventional gate driver τ2' is calculated with (10). Thus, the proposed gate driver pushes up gate voltage faster compared to the conventional gate drivers.…”

Section: Proposed Gate Driver Design Methodsmentioning

confidence: 99%

“…Switching characteristics of novel high voltage SiC-MOSFETs and SiC-IGBTs are evaluated in (9). Impacts of anti-parallel SiC-SchottkyDiodes on switching characteristics are evaluated in (10).…”

Section: Introductionmentioning

confidence: 99%

“…E-mail: koji yamaguchi@ ihi.co.jp * Department Electrical System, Product Development Center, IHI Corporation 1, Shin-Nakahara-cho, Isogo-ku, Yokohama 235-8501, Japan * * Department Electrical and Electronic Engineering, Chiba University 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522, Japan power converters and enhance power density. Evaluation and analysis have been performed in terms of switching characteristics (5)- (10) . The trade-off between switching loss and EMI is comprehensively evaluated in (5).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

et al. 2018

View full text Add to dashboard Cite

This paper presents a high-speed, low loss, and low noise gate driver for silicon-carbide (SiC) MOSFETs. We propose a gate boost circuit to reduce the switching loss and delay time without increasing the switching noise. The proposed gate driver enables converter-level efficiency improvements or power density enhancements. SiC MOSFETs have attracted significant interest as the next generation power devices. In general, the switching performance of power devices exhibits a trade-off between switching loss and noise. SiC-MOSFETs are expected to switch faster than Silicon IGBTs; however, faster switching might cause switching noise problems such as unwanted electromagnetic interferences (EMI). In this paper, we propose a gate driver topology that improves the switching performance of SiC-MOSFETs, and confirm the reduction in switching loss and delay time through experimental results.

show abstract

Research on optimization design of high efficient low noise SiC-MOSFETs inverters

Cited by 12 publications

References 4 publications

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

High Power Density SiC-Based Inverter with a Power Density of 70kW/liter or 50kW/kg

Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

Contact Info

Product

Resources

About