2015 Asia-Pacific Microwave Conference (APMC) 2015
DOI: 10.1109/apmc.2015.7413168
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Research on high efficiency silicon-based plasma antenna

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Cited by 2 publications
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“…[1]- [4] showed that, to achieve a metallic conductivity in silicon, the carrier concentration in an intrinsic layer must be very high, in the range of 10 18 -10 19 atom/cm 3 and also conductivity of LPIN diode depends on carrier lifetime and channel depth. To achieve reconfigurability in antenna functional characteristics by using solid state plasma, many models are proposed [1]- [6].…”
Section: Introductionmentioning
confidence: 99%
“…[1]- [4] showed that, to achieve a metallic conductivity in silicon, the carrier concentration in an intrinsic layer must be very high, in the range of 10 18 -10 19 atom/cm 3 and also conductivity of LPIN diode depends on carrier lifetime and channel depth. To achieve reconfigurability in antenna functional characteristics by using solid state plasma, many models are proposed [1]- [6].…”
Section: Introductionmentioning
confidence: 99%