Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology

Zhang, Dongguo; Li, Zhonghui; Yang, Qiankun; Peng, Daqing; Li, Chuanhao; Luo, Weike; Dong, Xiaoli

doi:10.1016/j.apsusc.2020.145339

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…After depositing the AlN layer on the SiC substrate the GaN films were flattened to make them thinner, as also reported in the literature. 16) After 30 min of growth (∼1.2 μm), a step-terrace structure was observed, and the RMS roughness was 0.31 nm. The lattice constants aand cwere 0.3190 nm and 0.5184 nm, respectively.…”

Section: Resultsmentioning

confidence: 97%

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Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Sumiya

Goto

Takahara

et al. 2023

Jpn. J. Appl. Phys.

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GaN films were grown on HVPE-AlN/SiC templates by metalorganic chemical vapor deposition (MOCVD) without annealing a reactor to eliminate memory effect. Step-terrace structure and smooth surface were obtained for GaN film with a thickness of ~200 nm. Subsequently, AlGaN/GaN heterostructures for the application of high electron mobility transistors (HEMTs) with thin GaN channel were fabricated with no C or Fe-doped GaN buffer layer. The interface quality at AlGaN/GaN heterostructure was good enough for two-dimensional electron gas (2DEG) to exhibit Shubnikov-de Haas oscillation in the magnetic field at 1.8 K. The GaN HEMTs with a thin channel on the AlN/SiC templates exhibited both pinch-off character and conventional properties. In view of both the shorter epitaxial-growth time and higher thermal conduction, HVPE-AlN/SiC templates are applicable to the fabrication of GaN HEMTs by MOCVD.

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Section: Resultsmentioning

confidence: 97%

“…12) Also, the reactor is conventionally annealed at high temperature to prevent the SiC substrate from being damaged by Ga due to the influence of reactor memory. 13) These annealing processes increase the manufacturing cost.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Sumiya

Goto

Takahara

et al. 2023

Jpn. J. Appl. Phys.

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“…We have previously reported an electron mobility ( μ ) of 2030 cm 2 V −1 s −1 . [ 14,15 ] Similarly, Zhang et al [ 16 ] and Narang et al [ 17 ] have reported high μ 's of 2238 and 1850 cm 2 V −1 s −1 with an MOCVD grown GaN channel thickness of 250 and 200 nm, respectively. For the highly down‐scaled devices, further reduction of the GaN channel thickness is necessary to ensure desired 2DEG confinement.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Chen¹,

Wen²,

Thorsell

et al. 2022

Physica Status Solidi (a)

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The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal–organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm−1 and maximum saturated drain currents above 1 A mm−1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering of only 20 mV V−1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm−1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm−1 and associated power‐added efficiencies of 56% and 40% are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure.

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Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology

Zhang

Guo

et al. 2023

Journal of Crystal Growth

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Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology

Cited by 5 publications

References 7 publications

Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology

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