2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) 2018
DOI: 10.1109/wipdaasia.2018.8734624
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Research of high-power converter based on the wide band gap power semiconductor devices for rail transit electrical drive

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Cited by 6 publications
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“…These impressively high stability characteristics, alongside the wide breakdown fields and very low ON-state resistances (it is reported that the R DS(ON) could be as low as 20 times that of silicon devices) of the devices made from wide band gap semiconductors makes this technology very promising and hence the potential future of power electronics [69]. In addition to these advantages, wide band gap (WBG) devices are capable of operating at high frequencies thus having the potential to require much lower filter sizes when they are utilized in converter circuits [70][71][72][73][74][75][76][77][78][79][80]. The efficiency and power density of the converter circuits is also positively impacted when WBG switches are used.…”
Section: Brief Historymentioning
confidence: 99%
“…These impressively high stability characteristics, alongside the wide breakdown fields and very low ON-state resistances (it is reported that the R DS(ON) could be as low as 20 times that of silicon devices) of the devices made from wide band gap semiconductors makes this technology very promising and hence the potential future of power electronics [69]. In addition to these advantages, wide band gap (WBG) devices are capable of operating at high frequencies thus having the potential to require much lower filter sizes when they are utilized in converter circuits [70][71][72][73][74][75][76][77][78][79][80]. The efficiency and power density of the converter circuits is also positively impacted when WBG switches are used.…”
Section: Brief Historymentioning
confidence: 99%