6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating area and MOS-channel surge capability

Arango, Yulieth; Romano, Gianpaolo; Mihaila, A.; Bellini, Marco; Liu, C.; Steimer, P.K.; Wirths, Stephan; Knöll, L.; Bianda, Enea

doi:10.1109/ispsd46842.2020.9170068

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2020

DOI: 10.1109/ispsd46842.2020.9170068

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6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating area and MOS-channel surge capability

Yulieth Arango

Gianpaolo Romano

A. Mihaila

et al.

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6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating area and MOS-channel surge capability

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References 7 publications

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