ReSe2/metal interface for hydrogen gas sensing

Aftab, Sikandar; Samiya,; Hussain, Mian Sabir; Elahi, Ehsan; Yousuf, Saqlain; Ajmal, Hafiz Muhammad Salman; Iqbal, Muhammad Waqas; Iqbal, Muhammad Zahir

doi:10.1016/j.jcis.2021.06.117

Cited by 13 publications

(14 citation statements)

References 44 publications

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“…This indicates a good interface, and the forward p-i-n diode current is mainly governed by the flow of major carriers without their recombination at the depletion zone . Our p-i-n diode shows the lowest value of the ideality factor compared with previous reports on the formation of homojunction p–n diodes with various carrier polarity modulation methodologies. ,− …”

Section: Resultsmentioning

confidence: 46%

Lateral PIN (p-MoTe₂/Intrinsic-MoTe₂/n-MoTe₂) Homojunction Photodiodes

Aftab

Ajmal

Elahi

et al. 2022

ACS Appl. Nano Mater.

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The construction of high-speed electronic devices that can be integrated using a single two-dimensional (2D) semiconductor with high performance remains challenging due to the absence of locally selective doping methods. In this study, we have demonstrated that the selective opposite polarities (p-type or n-type) from an intrinsic 2H-MoTe2 field-effect transistor (FET) can be configured through carrier type band modulation in molybdenum ditelluride (MoTe2) caused by the charge storage interface in MoTe2/BN vdW heterostructures upon UV illumination with electrostatic gate bias. With this approach, we demonstrate a lateral p-i-n homojunction diode (p-MoTe2/intrinsic-MoTe2/n-MoTe2) using a single two-dimensional semiconductor (2H-MoTe2) where an intrinsic FET (i-type region) is sandwiched between p- and n-type FETs. Electrical performance of such a p-i-n diode demonstrates an ideal rectifying behavior with a rectification ratio (I f/I r) of up to ∼1.4 × 106 at zero gate bias with an ideal value of the ideality factor of nearly ∼1. To support optoelectrical doping, Kelvin probe force microscopy (KPFM) measurements are performed where p- and n-type MoTe2 channels show work function values of ∼5.0 and ∼ 4.55 eV, respectively, with a built-in potential of ∼450 mV. In the photovoltaic mode, the p-i-n diode shows excellent photodetection properties under an illumination of 600 nm, a maximum value of responsivity of 1.10 A/W, and a specific detectivity value of 3.0 × 1012 Jones. The device shows ultrafast photoresponses, where the response speed (τr/τf) is estimated to be 10/20 ns. The proposed research offers an opportunity for creating stable p-i-n homojunction diodes for high-speed electronics with low power consumption using 2D materials.

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Section: Resultsmentioning

confidence: 46%

Lateral PIN (p-MoTe₂/Intrinsic-MoTe₂/n-MoTe₂) Homojunction Photodiodes

Aftab

Ajmal

Elahi

et al. 2022

ACS Appl. Nano Mater.

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“…6, to clarify the working mechanism of a Schottky junction photodetector, we use a simplified energy band structure to describe the process of photocurrent generation. In the literature, 17,35–38 the band gaps of ReS 2(1− x ) Se 2 x are between ReS 2 (1.59 eV) and ReSe 2 (1.31 eV), and the work function of ReS 2(1− x ) Se 2 x is larger than that of the Ag electrode (4.26 eV), between ReS 2 (4.83 eV) and ReSe 2 (4.92 eV). Generally, in such 2D TMDs, the S-rich film acts as an n-type while the Se-rich film acts as a p-type semiconductor.…”

Section: Resultsmentioning

confidence: 98%

“…6, to clarify the working mechanism of a Schottky junction photodetector, we use a simplified energy band structure to describe the process of photocurrent generation. In the literature, 17,[35][36][37][38] Note that the ohmic contact or Schottky contact between Ag and a ReS 2(1−x) Se 2x thin film can be determined by the simple I-V curve method. For example, from the I-V curves in Fig.…”

Section: Photodetection Mechanismmentioning

confidence: 99%

Vertically oriented ReS_2(1−x)Se_2x nanosheet-formed porous arrays on SiO₂/Si substrates for ultraviolet-visible photoelectric detection

Feng

Xiong

2022

Nanoscale

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“…Monolayer MX 2 s have the most tunable band gaps of any 2D material discovered to date. 18,25–29 Because of this, they have been the focus of a lot of research in field-effect transistors (FETs) and other nanodevices that use FETs. 30–36…”

Section: Introductionmentioning

confidence: 99%

“…Monolayer MX 2 s have the most tunable band gaps of any 2D material discovered to date. 18,[25][26][27][28][29] Because of this, they have been the focus of a lot of research in field-effect transistors (FETs) and other nanodevices that use FETs. [30][31][32][33][34][35][36] High-performance FET devices cannot be made directly from MX 2 s due to the high resistance to contact between the MX 2 s and the metal substrate.…”

Section: Introductionmentioning

confidence: 99%