Vertically oriented ReS_2(1−x)Se_2x nanosheet-formed porous arrays on SiO₂/Si substrates for ultraviolet-visible photoelectric detection

Abstract

Rhenium (Re)-based transition metal chalcogenides (TMDs) have excellent in-plane anisotropic optical and electrical properties. However, the distorted octahedral (1T′) structure and weak interlayer coupling easily lead to anisotropic growth and...

Broadband high-performance vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode

“…The R and D * of the device were 0.96 mA W −1 and 2.59 × 10 10 Jones at 980 nm and the light intensity of 0.2 mW cm −2 , respectively. As shown in figure 5(b), both R and D * decrease with increasing light intensity because when the light intensity increases, the carrier complex is also more intense, leading to a decrease in responsiveness [31,32]. According to the relationship (I ph ∝ P θ ) between photocurrent (I ph ) and light intensity (P) under zero bias, the fitted curve can be obtained as θ = 0.74 in figure 5(c), which satisfies θ < 1, indicating that trap states still exist between the conduction band edge and the Fermi energy level [33].…”

Application and prospect of 2D materials in photodetectors

“…He et al synthesize a series of continuous large-area ReS 2(1−x) Se 2x nanosheet-formed porous films on SiO 2 /Si substrates by using Te powder-assisted CVD. The device without bias voltage has a superior responsivity of 121.9 mA W −1 [172]. In addition, WS 2x Se 2−2x films can be obtained by vulcanizing WSe 2 [173].…”