Réponse spectrale de photopiles de haut rendement au silicium multicristallin

Nam, Le Quang; Rodot, M.; Nijs, J.; Ghannam, M.; Coppye, J.

doi:10.1051/jp3:1992108

Cited by 15 publications

(14 citation statements)

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“…The maximum power point of a generator photovoltaic corresponds to the Four essential data can be used to determine the photocurrent density-photovoltage characteristic of the photovoltaic generator [17]. The product of the maximal photocurrent density and the maximal photovoltage J phmax × V phmax gives a maximal power P max .…”

Section: Maximum Power Point and Efficiencymentioning

confidence: 99%

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Sylla¹,

Ly²,

Sow³

et al. 2018

JMP

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In this work, we study the method for determining the maximum of the minority carrier recombination velocity at the junction Sf max , corresponding to the maximum power delivered by the photovoltaic generator. For this, we study the temperature influence on the behavior of the front white biased solar cell in steady state. By solving the continuity equation of excess minority carrier in the base, we have established the expressions of the photocurrent density, the recombination velocity on the back side of the base Sb, and the photovoltage. The photocurrent density and the photovoltage are plotted as a function of Sf, called, minority carrier recombination velocity at the junction surface, for different temperature values. The illuminated I-V characteristic curves of the solar cell are then derived. To better characterize the solar cell, we study the electrical power delivered by the base of the solar cell to the external charge circuit as either junction surface recombination velocity or photovoltage dependent. From the output power versus junction surface recombination velocity Sf, we have deduced an eigenvalue equation depending on junction recombination velocity. This equation allows to obtain the maximum junction recombination velocity Sf max corresponding to the maximum power delivered by the photovoltaic generator, throughout simulink model. Finally, we deduce the conversion efficiency of the solar cell.

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Section: Maximum Power Point and Efficiencymentioning

confidence: 99%

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Sylla¹,

Ly²,

Sow³

et al. 2018

JMP

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“…Consider a crystalline silicon solar cell (n + -p-p + ) [18]. Its structure is illustrated in Figure 1.…”

Section: Theorymentioning

confidence: 99%

Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination

Ba¹,

Diallo²,

Ba³

et al. 2018

JMP

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The aim of this study is to determinate the electrical parameters of a white biased silicon solar cell submitted to an irradiation energy of particles (protons, helium, electrons and heavy ions). A theoretical study of the influence of irradiation energy on the photocurrent density, the photovoltage, the maximum power, as well as the maximum efficiency of the solar cell is presented through a resolution of the continuity equation relative to excess minority carrier. Then the expressions of the photocurrent density Jph, the photovoltage Vph, and the excess minority carrier recombination velocity at the back side Sb are established dependent of irradiation parameters φp, Kl respectively irradiation flux and intensity. In this work, we propose a method for determining the recombination velocity of the excess minority carrier at the junction Sf max corresponding to the maximum power point delivered by the photovoltaic generator under the influence of the irradiation. It is then obtained by calculating the derivative of the power with respect to the excess minority carrier recombination velocity Sf at the junction emitter-base. A transcendental equation solution is deduced as eigenvalue, leading to the junction recombination velocity of excess minority carrier and also yields the solar cell maximum conversion efficiency.

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“…Our study is to determinate these electrical parameters from the optimal base thickness of the solar cell under variation of the irradiation energy flow and extracting the values of the recombination velocity at the junction, corresponding to the maximum power. Figure 1 represents a n + -p-p + silicon solar cell [9] [10]. The emitter is the thin (n + ) zone covered by the front grids.…”

Section: Introductionmentioning

confidence: 99%

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

Sow¹,

Ba²,

Moujtaba³

et al. 2020

EPE

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Réponse spectrale de photopiles de haut rendement au silicium multicristallin

Cited by 15 publications

References 0 publications

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

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