Reply to Baird et al.: Mangroves and storm protection: Getting the numbers right

Vincent, Jeffrey R.; Das, Saudamini

doi:10.1073/pnas.0909952106

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Geoi Device Co-integration1

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2009

2022

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Cited by 8 publications

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“…Using sSOI is all the more favourable as it enhances electron mobility and minimizes stacking fault creation during Ge condensation (19). After coating the (s)SOI substrate with nitride, pFET active areas are opened, in which the Ge condensation process is applied (35,36). This is being optimized in order to suppress the bird's beak that is created at the edge of the condensation windows.…”

Section: Geoi Device Co-integrationmentioning

confidence: 99%

Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

et al. 2009

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The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as alternatives to the fabrication of n-type germanium channel devices. GeOI is also shown to be a versatile platform for the monolithic integration of Si and III-V devices and tunneling field effect transistors.

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Section: Geoi Device Co-integrationmentioning

confidence: 99%