2001
DOI: 10.1049/el:20010992
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Reply: Electro-thermal device and circuit simulation with thermal nonlinearity due to temperature dependent diffusivity

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Cited by 9 publications
(9 citation statements)
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“…Approximating the Laplacian by its conventional rectangular Cartesian form, the time-dependent heat diffusion equation becomes finally (5) The fully linearized equation, (5), can now be solved exactly with general linear boundary conditions, and this approximate linearization should be good for the moderate temperature dependences occurring in semiconductor systems [51], [52]. (Stronger non linearities can be treated, less compactly, within the fully analytical thermal resistance matrix approach by the equivalent linearization, [52].)…”
Section: Thermal Non Linearitymentioning
confidence: 99%
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“…Approximating the Laplacian by its conventional rectangular Cartesian form, the time-dependent heat diffusion equation becomes finally (5) The fully linearized equation, (5), can now be solved exactly with general linear boundary conditions, and this approximate linearization should be good for the moderate temperature dependences occurring in semiconductor systems [51], [52]. (Stronger non linearities can be treated, less compactly, within the fully analytical thermal resistance matrix approach by the equivalent linearization, [52].)…”
Section: Thermal Non Linearitymentioning
confidence: 99%
“…Approximating the Laplacian by its conventional rectangular Cartesian form, the time-dependent heat diffusion equation becomes finally (5) The fully linearized equation, (5), can now be solved exactly with general linear boundary conditions, and this approximate linearization should be good for the moderate temperature dependences occurring in semiconductor systems [51], [52]. (Stronger non linearities can be treated, less compactly, within the fully analytical thermal resistance matrix approach by the equivalent linearization, [52].) To illustrate the significance of the time variable transformation, (4), for electrothermal response [50], an analytical thermal impedance matrix is constructed to describe the response to step power input of 0.4 W, over a central square , at the surface of a cubic GaAs die, side m. Such a configuration is illustrative of, for example, a multifinger power FET.…”
Section: Thermal Non Linearitymentioning
confidence: 99%
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“…This compact model is obtained through fully analytic solution of the heat diffusion equation in complex structures, based on domain decomposition into regular subvolumes. The nonlinear heat diffusion equation is converted into a fully linear equation by appropriate transformations of variable [15]- [17]. Analytic series solutions for thermal subsystems are accelerated for rapid precomputation prior to coupled electrothermal co-simulation [18].…”
Section: Thermal Impedance Matrix Modelmentioning
confidence: 99%
“…Under successive Kirchhoff transformation of temperature, T → θ, and transformation of time, t → τ [15]- [17], the nonlinear, 3-dimensional heat diffusion equation,…”
Section: Thermal Impedance Matrix Modelmentioning
confidence: 99%