2008
DOI: 10.1016/j.electacta.2007.11.065
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Repair of thin thermally grown silicon dioxide by anodic oxidation

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Cited by 21 publications
(7 citation statements)
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“…The C p /R p and the C sc /R sc pairs represent the capacitive and resistive behaviors of the surface layer and the space charge region of the surface layer, respectively. The constant phase element ͑CPE͒ presents the effect of defects in the surface layer 42 and R CPE represents the resistance of the CPE in the equivalent circuit. The CPE element, which compensates for the nonhomogeneity in the system, is defined by two values, Q and n. The impedance, Z, of CPE is presented by Eq.…”
Section: C252mentioning
confidence: 99%
“…The C p /R p and the C sc /R sc pairs represent the capacitive and resistive behaviors of the surface layer and the space charge region of the surface layer, respectively. The constant phase element ͑CPE͒ presents the effect of defects in the surface layer 42 and R CPE represents the resistance of the CPE in the equivalent circuit. The CPE element, which compensates for the nonhomogeneity in the system, is defined by two values, Q and n. The impedance, Z, of CPE is presented by Eq.…”
Section: C252mentioning
confidence: 99%
“…The semiconductor is usually made of silicon bulk, covered with a thermally oxidized SiO 2 layer. In order to reduce the recombination of photocarriers and improve spatial resolution, the silicon bulk can be replaced with thin silicon films (thinned silicon substrate [38,39,40], silicon on insulator (SOI) [18], amorphous silicon (a-Si) [41,42,43,44] and silicon on sapphire (SOS) [45,46]) or other semiconductor thin layers deposited on transparent substrates (GaAs [47], GaN [48], In-Ga-Zn oxide (IGZO) [49] and indium tin oxide (ITO) [50]). The sensing material such as Si 3 N 4 [1,28,38,39,51], Al 2 O 3 [52,53,54], Ta 2 O 5 [51], HfO 2 [55,56,57], NbO x [40,58,59], SnO x [60], self-assembled organic monolayer (SAM) [61,62] and nanofibers [63,64] can be used for pH sensing.…”
Section: Measurement System Set-upmentioning
confidence: 99%
“…26 The Q p /R p pair represents the capacitive and resistive behaviors of the passive film, and, considering the defects in the passive layer, Q p is substituted for capacitor C p to give a more accurate fit. 27,28 The values of the different elements in the equivalent circuit at 350/450 mV are shown in Table 2.…”
Section: Low Anodic Potentials (Ocp To 470 Mv)mentioning
confidence: 99%