Removal of SU-8 photoresist for thick film applications

Dentinger, Paul M.; Clift, W. Miles; Goods, S.H.

doi:10.1016/s0167-9317(02)00490-2

Cited by 110 publications

(81 citation statements)

References 3 publications

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“…A key advance over previous work is the replacement of conventional 3D resists (e.q. SU-8, Microchem) 13 , which require harsh removal conditions such as high-temperature burning ( ~ 500 ° C) or plasma etching 14 , with a positive-tone resist (AZ 9260, Clariant). Th e positive-tone resist can be easily removed by buff ered aqueous solution of KOH aft er infi ltration of PDMS, without causing damage to the 3D nano-architecture.…”

Section: Fabrication Of 3d Pdmsmentioning

confidence: 99%

Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors

et al. 2012

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The realization of levels of stretchability that extend beyond intrinsic limits of bulk materials is of great importance to stretchable electronics. Here we report large-area, three-dimensional nano-architectures that achieve this outcome in materials that offer both insulating and conductive properties. For the elastomer poly(dimethylsiloxane), such geometries enhance the stretchability and fracture strain by ~ 62 % and ~ 225 % over the bulk, unstructured case. The underlying physics involves local rotations of narrow structural elements in the threedimensional network, as identifi ed by mechanical modelling. To demonstrate the applications of three-dimensional poly(dimethylsiloxane), we create a stretchable conductor obtained by fi lling the interstitial regions with liquid metal. This stretchable composite shows extremely high electrical conductivity ( ~ 24,100 S cm − 1 ) even at strains > 200 % , with good cyclic properties and with current-carrying capacities that are suffi cient for interconnects in light-emitting diode systems. Collectively, these concepts provide new design opportunities for stretchable electronics.

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Section: Fabrication Of 3d Pdmsmentioning

confidence: 99%

Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors

et al. 2012

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“…Several publications report on increased etching rates for the plasma ashing, when adding CF 4 to the oxygen [157][158][159][160]. Other methods for resist removal are burning, swelling in organic solvents (leading to a lift-off), oxidation in molten salt baths [157] and, as is becoming more and more popular in semiconductor industry, the utilisation of ozonised water to remove organic resist residues [161].…”

Section: Resist Investigations For Nilmentioning

confidence: 99%

“…However, for pure oxygen plasma ashing, the etching rates in crosslinked resist systems are typically very low. Dentinger et al [157] and Engelke et al [159] demonstrated increasing etching rates of crosslinked SU8 resist by adding tetrafluoromethane (CF 4 ) to the oxygen. There, it was shown that by adding a CF 4 gas flow in the range of less than 10 % of the total gas flow, resist etching rates above 1 µm per minute can be achieved for SU8.…”

Section: Dry Chemical Resistmentioning

confidence: 99%

Nanoimprint lithography for solar cell texturisation

et al. 2010

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The highest efficiency silicon solar cells are fabricated using defined texturing schemes by applying etching masks. However, for an industrial production of solar cells the usage of photolithographic processes to pattern these etching masks is too consumptive. Especially for multicrystalline silicon, there is a huge difference in the quality of the texture realized in high efficiency laboratory scale and maskless industrial scale fabrication. In this work we are describing the topography of a desired texture for solar cell front surfaces. We are investigating UV-nanoimprint lithography (UV-NIL) as a potential technology to substitute photolithography and so to enable the benefits resulting of a defined texture in industrially feasible processes. Besides the reduced process complexity, UV-NIL offers new possibilities in terms of structure shape and resolution of the generated etching mask. As mastering technology for the stamps we need in the UV-NIL, interference lithography is used. The UV-NIL process is conducted using flexible UV-transparent stamps to allow a full wafer process. The following texturisation process is realized via crystal orientation independent plasma etching to tap the full potential of the presented process chain especially for multicrystalline silicon. The textured surfaces are characerised optically using fourier spectroscopy

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“…The method of dry etching crosslinked SU-8 has been discussed by many researchers [11][12][13][14]. Dentinger et al .…”

Section: Introductionmentioning

confidence: 99%

A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

Han

Yin

Zou

et al. 2016

Journal of Electrical Engineering

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Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF 4 /O 2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF 4 /O 2 mixture contains about 5 % CF 4 by volume, the etching rate can be reached at 5.2 µm/min .

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Removal of SU-8 photoresist for thick film applications

Cited by 110 publications

References 3 publications

Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors

Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors

Nanoimprint lithography for solar cell texturisation

A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

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