Removal of Near-Interface Oxide Traps at SiO&lt;sub&gt;2&lt;/sub&gt;/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

Kajifusa, Hiroyuki; Hirai, H.; Fujino, Yuki; Kita, Ken’ichiro

doi:10.7567/ssdm.2015.ps-14-7

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials 2015

DOI: 10.7567/ssdm.2015.ps-14-7

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Removal of Near-Interface Oxide Traps at SiO<sub>2</sub>/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

Hiroyuki Kajifusa¹,

H. Hirai²,

Yuki Fujino³

et al.

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Removal of Near-Interface Oxide Traps at SiO<sub>2</sub>/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

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