Removal of copper and nickel contaminants from Si surface by use of cyanide solutions

Si cleaning method without surface morphology change by cyanide solutions

“…As a result of etching, the Cu contaminants are removed from the Si surfaces, but the Si surfaces are considerably roughed. By cleaning with the HCN aqueous solutions, on the other hand, CN À ions directly react with Cu contaminants and Cu contaminants are removed by forming Cu-cyano-complex ions, which are soluble and stable in the aqueous solutions [16,17,19].…”

“…We have recently developed a cleaning method for the removal of heavy metal contaminants such as Cu and Ni using cyanide solutions [16][17][18][19][20]. The semiconductor cleaning can be performed at room temperature using dilute (e.g., $0.03 wt%) solutions due to strong reactivity of cyanide ions (CN À ) to form stable metal-cyano complex ions.…”

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning

“…The treatment with the KCN aqueous solutions has already been found to eliminate Si/SiO 2 interface states [15][16][17] and defect states in polycrystallilne [18] and amorphous Si [19], resulting in the improvement of electrical characteristics of metal-oxide-semiconductor (MOS) diodes. We have recently found that KCN solutions of methanol have an ability of removing Cu and Ni contaminants from Si surfaces [20].…”

On the topographic and optical properties of SiC/SiO2 surfaces

“…In the present study the hydrogen plasma treatment passivation was applied to the 3C SiC and 4H SiC surfaces. The a-SiC:H/SiO 2 layers formed by the NAOS method were passivated by a cyanide treatment under various experimental conditions [11][12][13][14]. We studied changes of the surface roughness during these oxidation and passivation procedures and measured surface properties were used for the optical parameter determination.…”