A new 2.45 GHz microwave-excited atmospheric-pressure line plasma system was developed. An atmospheric-pressure helium (He) line plasma with a length of ∼350 mm and a width of ∼6 mm was generated in air at a microwave power of 1100 W. The length of the He line plasma was varied in the range of ∼120–350 mm by changing the width of the waveguide in the microwave tube and the position of the short plunger. When a Si wafer was irradiated with the He line plasma for 10 s, the surface of the Si wafer became superhydrophilic in a belt shape. On the basis of these results, the new microwave-excited atmospheric-pressure He line plasma system was found to be effective for dry cleaning large-area surfaces, such as semiconductor substrates and glass plates used in flat-panel displays.