Remote Plasma‐Enhanced Metalorganic Chemical Vapor Deposition of Aluminum Oxide Thin Films

Volintiru, I.; Creatore, M.; Hemmen, J. Leo van; Sanden, M.C.M. van de

doi:10.1002/ppap.200700164

Cited by 8 publications

(4 citation statements)

References 19 publications

(30 reference statements)

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“…However, similar results have been previously published [12], [13], [14]. Unfortunately, there is no single explanation why the index of refraction is low.…”

Section: Resultssupporting

confidence: 85%

Development of pinhole-free amorphous aluminum oxide protective layers for biomedical device applications

Litvinov

Wang

George

et al. 2013

Surface and Coatings Technology

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This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures.

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“…However, similar results have been previously published [12], [13], [14]. Unfortunately, there is no single explanation why the index of refraction is low.…”

Section: Resultssupporting

confidence: 85%

Development of pinhole-free amorphous aluminum oxide protective layers for biomedical device applications

Litvinov

Wang

George

et al. 2013

Surface and Coatings Technology

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“…Being an oxide, ZnO also enjoys the extreme stability against the oxidation problem which can severely affect the device performance as in case of some of semiconductors such as GaAs, InAs etc [6] . Other advantages of ZnO are the resistance to high energy radiation, which makes it suitable for space applications, as well as the stability and amenability to wet chemical etching , which can be exploited for the fabrication of small size devices [7] In this work , the (ZnO) deposit by PLD method using Nd:YAG laser using pulsed Nd:YAG pulse laser at 1064nm wavelength and repetition rate 6Hz . The deposits were characterized by XRD and AFM to observe the surface structure ,PL to investigate and hall effect to examined the state the novelty ρ this work electrical properties of the films.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Structural, Optical and Electrical Properties of ZnO Prepared Thin Film by PLD

Al-Dabag¹

2015

ETJ

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In this paper , Zinc Oxide (ZnO) films were grown on glass substrates by Pulsed Laser Deposition (PLD) technique at room temperature under the vacuum pressure of 3×10 −3 mbar. Employing a Nd:YAG pulses laser at wavelength 1064nm was used in this technique .The effect of number of laser pulses (200,500 and 800) at annealing temperature 450 C o on the structural, optical and electrical properties was studied. The structure of the ZnO thin films was examined by X-Ray diffraction (XRD), it was found that ZnO thin films are polycrystalline with many peaks, and the results of Atomic Force Microscopy (AFM) indicated that all films have grain size around 90 nm. The optical properties concerning the photoluminescence (PL) spectra were studied for the prepared thin film. From the PL, the optical gap of the ZnO thin film was determined. The Hall effect measurements confirmed that the ZnO thin films are n-type , While the number of laser pulses is increasing, the charge carriers concentration (n) increases, and Hall mobility (µR H R) decreases.

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“…In addition, it has recently been established that AlO x films can be used for the effective passivation of silicon surfaces 12–20. Depending on the application, AlO x is commonly synthesized by methods such as sputtering,17, 21 chemical vapor deposition (CVD),22, 23 plasma‐enhanced CVD (PECVD), 6, 7, 18–20, 24–33 and atomic layer deposition (ALD) 1–5, 13–16, 34–41. The latter two methods are especially suitable for the deposition of high‐quality AlO x films at low substrate temperatures ( T dep = ≈150–350 °C).…”

Section: Introductionmentioning

confidence: 99%

Plasma‐enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

Dingemans

Sanden

Kessels

2012

Plasma Processes & Polymers

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An alternative plasma‐enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high‐quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precursor flow in the reactor leads to enhanced control over plasma‐surface interactions. By variation of the time interval between the sequential Al(CH3)3 precursor injection pulses (10–50 ms) into the O2 plasma, the deposition rate (>30 nm · min−1) and material properties can be tailored. In situ diagnostics revealed that the deposition process is governed by fast precursor depletion and film growth directly after the precursor pulse. Subsequently, in the remainder of the interval between the precursor pulses, densification of the layer takes place under influence of the O2 plasma. The resulting AlOx films exhibit a low impurity content and refractive index >1.6 for optimized process settings. The films can be applied for effective surface passivation of Si as indicated by ultralow surface recombination velocities <1 cm · s−1. The structural properties and interface quality are quite similar as obtained for atomic layer deposited films. We anticipate that pulsed‐flow PECVD processes may also prove beneficial for the synthesis of other functional thin films.

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Remote Plasma‐Enhanced Metalorganic Chemical Vapor Deposition of Aluminum Oxide Thin Films

Cited by 8 publications

References 19 publications

Development of pinhole-free amorphous aluminum oxide protective layers for biomedical device applications

Development of pinhole-free amorphous aluminum oxide protective layers for biomedical device applications

Investigation of Structural, Optical and Electrical Properties of ZnO Prepared Thin Film by PLD

Plasma‐enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

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