2013
DOI: 10.1016/j.solmat.2013.04.016
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Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology

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Cited by 166 publications
(94 citation statements)
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References 42 publications
(55 reference statements)
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“…Wide band gap n-type and p-type hydrogenated microcrystalline silicon oxide (μc-SiO:H) films can be grown by PECVD with high conductivities [107][108][109][110]. A study using electron energy loss spectroscopy (EELS) combined with transmission electron microscopy (TEM) and Rutherford backscattering on typical µc -SiO:H layers for thin film silicon revealed that this material consists of a mixed phase matrix of SiO and Si filaments with an oxygen atomic content x, between 0.4 and 0.8 [108].…”
Section: Pin Solar Cellsmentioning
confidence: 99%
“…Wide band gap n-type and p-type hydrogenated microcrystalline silicon oxide (μc-SiO:H) films can be grown by PECVD with high conductivities [107][108][109][110]. A study using electron energy loss spectroscopy (EELS) combined with transmission electron microscopy (TEM) and Rutherford backscattering on typical µc -SiO:H layers for thin film silicon revealed that this material consists of a mixed phase matrix of SiO and Si filaments with an oxygen atomic content x, between 0.4 and 0.8 [108].…”
Section: Pin Solar Cellsmentioning
confidence: 99%
“…This material makes use of the high electrical conductivity of doped µ cSi:H and the high optical transparency of amorphous silicon oxide [73,86]. A small fraction of highly conductive small-area (1 cm × 1 cm) triple-junction solar cells [87]. Another material family showing promise as the top highly conductive window is microcrystalline hydrogenated silicon carbide (µ c-SiC:H), which is naturally n-type [88].…”
Section: Microcrystalline Si and "Micromorph" Solar Cellsmentioning
confidence: 99%
“…The most common TCOs used as front electrodes for TF-Si solar cells in the superstrate (p-i-n) configuration are aluminum-doped zinc oxide (ZnO:Al) deposited by sputtering [12,13], boron-doped zinc oxide (ZnO:B) grown by low-pressure chemical vapor deposition (LPCVD) [14] and fluorine-doped tin oxide (SnO 2 :F) grown by atmospheric-pressure chemical vapor deposition (APCVD) [15,16].…”
Section: Introductionmentioning
confidence: 99%