2021
DOI: 10.1109/tdmr.2021.3055210
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Reliable and Radiation-Hardened Push-Pull pFlash Cell for Reconfigured FPGAs

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Cited by 9 publications
(2 citation statements)
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“…For the ERS process, the negative bias voltage can effectively exhaust the electrons in the CTL. In order to avoid the over-ERS phenomenon, a symmetrical operation is adapted, and the detailed method for this is detailed in our previous paper [29].…”
Section: Working Mechanism Of Sonos Pflashmentioning
confidence: 99%
“…For the ERS process, the negative bias voltage can effectively exhaust the electrons in the CTL. In order to avoid the over-ERS phenomenon, a symmetrical operation is adapted, and the detailed method for this is detailed in our previous paper [29].…”
Section: Working Mechanism Of Sonos Pflashmentioning
confidence: 99%
“…The amount of radiation a device can tolerate is indicated as Total Ionizing Dose (TID). Radiation tolerance of a device can be achieved in different ways [41][42][43] and depends on both the design methodology and the technologies used to make them. Examples of devices specifically built to work in space environment include the following:…”
Section: Radiation Hardened Devicesmentioning
confidence: 99%