Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

Rodríguez, J. A.; Remack, K.; Boku, K.; Udayakumar, K. R.; Aggarwal, S.; Summerfelt, Scott R.; Celii, F. G.; Martin, Samuel P.; Hall, L.; Taylor, Kelly; Moïse, T. S.; McAdams, H.; McPherson, J. W.; Bailey, R.; Fox, Glen R.; Depner, M.

doi:10.1109/tdmr.2004.837210

Cited by 92 publications

(56 citation statements)

References 33 publications

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“…Polarization decays gradually as a function of temperature, following an approximately second-order temperature dependence reported previously [8]. The depolarization effect is not strongly time dependent; it occurs when the sample temperature equilibriates with the stress temperature.…”

Section: ) Thermal Depolarization (Td)supporting

confidence: 67%

“…A reduction of the spontaneous polarization occurs as the ambient temperature of the ferroelectric film increases towards the Curie temperature [6], which for bulk ceramics with composition used in this process is ~430°C [7], [8]. Polarization decays gradually as a function of temperature, following an approximately second-order temperature dependence reported previously [8].…”

Section: ) Thermal Depolarization (Td)mentioning

confidence: 99%

“…When the sample is cooled to room temperature, a reduced signal margin is detected at the first data read, dependent on the maximum exposure temperature. The depolarization effect is not permanent; the polarization is restored after the first read/restore operation [8].…”

Section: ) Thermal Depolarization (Td)mentioning

confidence: 99%

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Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Rodriguez

Remack

Gertas

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Section: ) Thermal Depolarization (Td)supporting

confidence: 67%

Section: ) Thermal Depolarization (Td)mentioning

confidence: 99%

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Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Rodriguez

Remack

Gertas

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…The cycling endurance measurements were conducted for 100,000 trench array, and the results are summarized in 6(c). The highest endurance under the applied field of 2.5 MV/cm is 2 Â 10 9 cycles (note: the conventional perovskites can withstand 10 12 endurance cycles 57 ). Although lowering the applied field to 2 MV/cm can increase the endurance to above 10 10 cycles, the switching shows sub-loop behavior and thus a strong polarization fatigue effect is observed.…”

Section: Applications Of Ferroelectric Hfo 2 -Based Materials In Ferammentioning

confidence: 99%

Ferroelectric HfO₂-based materials for next-generation ferroelectric memories

2016

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Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O 3 and SrBi 2 Ta 2 O 9 , has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Nextgeneration cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO 2 thin films in 2011, HfO 2 -based materials have aroused widespread interest in the field of FeRAM, because they are CMOScompatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO 2 -based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

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“…As one of the emerging non-volatile memory technologies, the ferroelectric random access memories (FRAMs) possesses superior features such as short write-access time, low power consumption, high endurance, and low voltage operation [1][2][3][4][5]. Besides, the ferroelectric materials are found to have high tolerance to radiation [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Total ionizing dose sensitivity of function blocks in FRAM

Liou

et al. 2015

Microelectronics Reliability

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Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

Cited by 92 publications

References 33 publications

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Ferroelectric HfO₂-based materials for next-generation ferroelectric memories

Total ionizing dose sensitivity of function blocks in FRAM

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Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

Cited by 92 publications

References 33 publications

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Ferroelectric HfO2-based materials for next-generation ferroelectric memories

Total ionizing dose sensitivity of function blocks in FRAM

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Product

Resources

About

Ferroelectric HfO₂-based materials for next-generation ferroelectric memories