Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

Remmell, T.; Ramprasad, Rampi; Roberts, David A.; Raymond, M.; Martin, Manfred; Qualls, D.; Luckowski, E.; Braithwaite, S J; Miller, M.; Walls, James

doi:10.1109/relphy.2004.1315395

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…Therefore, the appropriate model for lifetime dependence on voltage is Poole-Frenkel conduction-base √ E model. 30,31…”

Section: Resultsmentioning

confidence: 99%

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

Tian¹,

Li²,

Li³

et al. 2018

ECS J. Solid State Sci. Technol.

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In this paper, we fabricated a W/Al 2 O 3 /Ti metal-insulator-metal (MIM) antifuse one-time programmable memory. A large current overshoot was observed during the dielectric breakdown, which generated a strong conductive filament and resulted in extremely low on-state resistance. The performance of this Al 2 O 3 -based antifuse has been demonstrated with an ultra large ON/OFF window on the order of 10 12 . Both breakdown voltage and on-state resistance exhibit excellent uniformity, the off-state lifetime is projected to be 1591 years at 2 V, and the on-state exhibits a reliable filament that is difficult to rupture.

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“…Therefore, the appropriate model for lifetime dependence on voltage is Poole-Frenkel conduction-base √ E model. 30,31…”

Section: Resultsmentioning

confidence: 99%

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

Tian¹,

Li²,

Li³

et al. 2018

ECS J. Solid State Sci. Technol.

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show abstract

“…Not abandoning the notion that Cu ions need to be present for dielectric breakdown to occur, Suzumura et al [371] proposed that TDDB would have the form of Equation (11.10) because injected Cu ions from the anodeside electrode drift along the field direction, especially along the capping dielectric/low-k interface, and eventually accumulate at the cathode side at the low-k/barrier metal interface. In a follow-up discussion [373], Suzumura et al noted that high-field stress significantly affects the capping SiC x N y reliability (which should not be ignored [374][375][376]), but at lower field, the IMD reliability can be substantially different. Once a critical concentration of Cu (Q crit ) is reached, failure occurs.…”

Section: Lifetime Extrapolation and Modelsmentioning

confidence: 99%

Electrical Breakdown in Advanced Interconnect Dielectrics

Ogawa

Aubel

2012

Advanced Interconnects for ULSI Technology

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“…The advantage of a PIP capacitor compared to other types of capacitor is of its higher capacitance density value [1].…”

Section: Introductionmentioning

confidence: 99%

Etch chemistry effect study for poly stringer defect on high topology PIP process

Ngiaw

Hun

Chen

et al. 2010

TENCON 2010 - 2010 IEEE Region 10 Conference

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This paper shows the study of the effect of etch chemistry towards poly stringer defect found in PolysiliconInsulator-Polysilicon (PIP) processes. This defect was detected after Poly2 etching process and further enhanced after Sidewall (SW) etching process. The formation of stringer defect was caused by the topology of the double poly PIP capacitor structure and insufficient process recipe margin. Therefore, the challenge was to eliminate the defect by developing an optimal Poly2 etching recipe. The weakness of the existing process had been identified and a design of experiment (DOE) was carried out to identify the optimal condition for defect removal as well as to maintain a good polysilicon gate profile. Through the full factorial DOE, it was found that the gas combination of HBr and Cl 2 in an optimum pressure condition was a major factor and a concern in this case. The poly stringer defect was then eliminated completely with the new Poly2 etching recipe.

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Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

Cited by 8 publications

References 4 publications

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

Electrical Breakdown in Advanced Interconnect Dielectrics

Etch chemistry effect study for poly stringer defect on high topology PIP process

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