Reliability of InGaP emitter HBTs at high collector voltage

Yeats, B.; Bonse, M.; Chandler, P. J.; Culver, M.K.; D'Avanzo, D.C.; Essilfie, G.K.; Hutchinson, C.P.; Kühn, Daniel; Low, T.S.; Shirley, Tim

doi:10.1109/gaas.2002.1049032

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…In InGaPemitter HBTs, the gradual drift is relatively small (nearly zero), except possibly at high voltage [6], Fig. 5) 3) There is large sudden β drop at end of life [2,3,7,8,11].…”

Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

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GaAs HBT Reliability

Yeats

Low

Alt

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes. We have found that infant failures are dominated by substrate dislocation density, which can limit long-term-reliable circuit sizes to under ~1000 transistors.

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“…In InGaPemitter HBTs, the gradual drift is relatively small (nearly zero), except possibly at high voltage [6], Fig. 5) 3) There is large sudden β drop at end of life [2,3,7,8,11].…”

Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

“…The process features minimum 2x2 µm 2 emitter size with Ft = 65 GHz, Fmax = 75 GHz, Beta ≈ 120, BVcbo = 15.4V, and operating Je up to 1.2 mA/μm 2 . The fabrication process and reliability have been discussed in previous papers [1][2]6].…”

Section: Typical Ingap-emitter Structurementioning

confidence: 99%

GaAs HBT Reliability

Yeats

Low

Alt

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…As defined by Yeats et al, the time dependence of beta, which is a function of temperature and current stress, can be divided into several different stages (Figure 1) [7]. The final stage, sudden and catastrophic beta degradation, has been associated with the fundamental failure of the device.…”

Section: Introductionmentioning

confidence: 99%

“…Reliability testing remains unstandardized, but typically involves beta degradation at elevated temperatures and current densities [7]. Device reliability has now matured to the point that real world failures are typically related to electrical shorts in the final circuit rather than the fundamental degradation of the III-V devices [8].…”

Section: Introductionmentioning

confidence: 99%

Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTs

Welser

DeLuca

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)

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Sudden beta degradation typically characterizes device failures in state-of-the-art GaAs-based HBTs under elevated temperature and current stress. Recombination enhanced defect reaction (REDR) processes may be responsible for this degradation. In this work, we review key experimental observations and possible physical mechanisms governing beta degradation which have been suggested in the literature. A simple REDR model for quantifying increases in the base-emitter depletion region trap density is first refined and then extended to model some types of premature failures.

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