Exciton polaritons in semiconductor waveguides Appl. Phys. Lett. 102, 012109 (2013) Photonic microdisk resonators in aluminum nitride J. Appl. Phys. 113, 016101 (2013) Electrically controlled absorption in a slab waveguide formed by the implantation of protons in a potassium lithium tantalate niobate substrate Appl. Phys. Lett. 101, 261101 (2012) μ-Raman spectroscopy characterization of LiNbO3 femtosecond laser written waveguides J. Appl. Phys. 112, 123108 (2012) Additional information on J. Appl. Phys. Data are presented for the refractive index profiles for low-dose He ϩ ion-implanted LiNbO 3 waveguides. In the nuclear stopping region, the extraordinary index is increased for low ion doses, by contrast with index reduction normally associated with ion-implanted waveguiding structures. The index increase was confirmed by fabricating a buried waveguide for the extraordinary index by use of multi-energy implants. For single-energy implants, data are shown which map the extraordinary index at the surface together with that in the nuclear collision zone, as a function of angle relative to the z axis of light propagation in surface waveguides for X and Y cut LiNbO 3 . These indices cross over near 45°, which results in a mode gap for which waveguide modes are not supported. A mechanism for this behavior is discussed based on defect-induced lattice relaxation. The phenomenon of a controlled mode gap may have applicability for optoelectronic and nonlinear materials and devices.
A detailed description of the use of ion implantation to create optical waveguides in laser crystals is given. Calculated mode profiles and lasing thresholds are shown to be in good agreement with experimental results in a monolithic planar waveguide Nd:YAG laser. The first fabrication and characterization of ion implanted channel waveguides in Nd :YAG is also reported.
Second-harmonic generation (SHG) has been successfully performed in ion-implanted planar waveguides in KTiOPO4. The waveguides were formed by helium implantation, and SHG was achieved using type 2 zero order mode phase matching at a wavelength of ∼1.07 μm. The results indicate that the high nonlinearity of the material remains in the guiding region after ion implantation. The conversion efficiency in a typical guide is estimated at ∼25% for ∼1 μJ pulsed excitation. At a lower input power level, the harmonic green output from the waveguide is 20 times higher than that from the bulk for the same amount of fundamental power. This clearly demonstrates the advantage of using waveguides in achieving frequency doubling for integrated optical devices.
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