Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown

Choi, Y. S.; Park, Hyun-Woo; Nishida, Toshikazu; Thompson, Scott E.

doi:10.1063/1.3074299

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…[45,46] In comparison, the interplay between mechanical stresses and electrical failures has been more rarely addressed. Most attempts have focused on the effect of mechanical stresses on the dielectric breakdown of ultra-thin oxide films, [47][48][49][50] demonstrating the synergistic effect of mechanical and electrical stresses on bond breaking. Conversely, it has been reported that electrical current initiates mechanical delamination.…”

Section: Introductionmentioning

confidence: 99%

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Rusinowicz

Volpi

Parry

et al. 2022

Adv Funct Materials

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Advanced devices (for microelectronics, energy storage, power sourcing) are complex architectures of metals and dielectrics subjected to harsh mechanical stresses. The functional reliability of the embedded dielectrics is driven by their ability to preserve their electrical properties (such as leakage and breakdown). Accordingly, understanding the interplay between the mechanical and electrical behaviors of dielectric films is critical to predict the lifetime of functional devices. In this study, the effect of plastic deformation on the electrical conduction of an ultra‐low‐k dielectric film is elucidated by combining in situ advanced experiments and finite element modeling. Experimentally, “electrical‐nanoindentation” tests emphasize the strong correlation between electrical and mechanical failures (leakage degradation, breakdown, plasticity, cracking). These experiments also reveal a counterintuitive electrical conduction drop under high mechanical stresses. This phenomenon is reproduced numerically by correcting the Poole–Frenkel conduction law with a strain‐dependent factor, and described analytically in terms of space‐charge build‐up induced by the trapping of holes at the mechanically generated defects. A threshold strain is identified as the keystone relating this strain‐dependent conduction to the current line distribution within the dielectric. This study provides a new understanding of the mechanical/electrical couplings in dielectrics, which opens promising insights into reliability issues for advanced devices.

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Section: Introductionmentioning

confidence: 99%

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Rusinowicz

Volpi

Parry

et al. 2022

Adv Funct Materials

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show abstract

“…Measurement for dielectric breakdown 24,34 location shows epitaxy configuration induced by electrical stress in Si/ SiO 2 interface. Given the importance of the enormous strain field in dielectric breakdown process, [35][36][37] it is interesting to look at the strain effects on the electronic states. Figure 2͑c͒ shows the DOS information obtained from simulation with 2% tensile strain along the ͑001͒ plane of SiO 2 .…”

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confidence: 99%

Microscopic mechanism of leakage currents in silica junctions

Luo

Wang

Zheng

2009

Journal of Applied Physics

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Combining the nonequilibrium Green’s functions with the density-functional theory, we investigated the structural and electronic properties of silica junctions sandwiched between Al electrodes. The results show that the oxygen vacancies and tensile strain field play an important role in the electron transport properties of these two-probe systems. Sizable changes in leakage current across the barrier are found for the oxygen deficient system. It is found that Si dangling bonds formed by the introduction of oxygen vacancies are the main building blocks of the conduction channel in silica thin film. The midband gap states generated by the Si dangling bonds contribute to the leakage current. Detail analysis shows that four conduction channels are generated in silica junction after the presence of oxygen vacancies, resulting in a large enhancement of the electron transmission coefficient at the Fermi level. This leakage current mechanism provides useful information in the microelectronic designs.

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Dielectric Breakdown of Microelectronic and Nanoelectronic Devices

Wang

2013

Advanced Topics in Science and Technology in China

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Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown

Abstract: Articles you may be interested inElectrical stress-induced charge carrier generation/trapping related degradation of HfAlO / SiO 2 and HfO 2 / SiO 2 gate dielectric stacks

Cited by 4 publications

References 23 publications

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Microscopic mechanism of leakage currents in silica junctions

Dielectric Breakdown of Microelectronic and Nanoelectronic Devices

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