Reliability Investigation of Cu/In TLP Bonding

Abstract

Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from −40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

Microstructure characterization and mechanical behavior for Ag3Sn joint produced by foil-based TLP bonding in air atmosphere

“…In recent years, the demand for high-temperature electronics, which require highly reliable and stable functionality, has been rapidly increasing in particular for the automotive, aerospace, deep-well drilling and energy production industries [1][2][3]. For example, deep oil and gas drilling will be performed in harsh environments in the near future, and the control and sensing devices inside need to survive pressure reaching to 30000 psi and temperature up to 300 ºC for deeper exploration [3].…”

“…In recent years, the demand for high-temperature electronics, which require highly reliable and stable functionality, has been rapidly increasing in particular for the automotive, aerospace, deep-well drilling and energy production industries [1][2][3]. For example, deep oil and gas drilling will be performed in harsh environments in the near future, and the control and sensing devices inside need to survive pressure reaching to 30000 psi and temperature up to 300 ºC for deeper exploration [3]. Thus, it will be an inevitable trend to substitute the conventional Si-based power devices for the wide band-gap (WBG) semiconductors such as SiC and GaN, since the former are limited to be operated less than 150ºC while the latter are capable of electronic functionality above 300ºC [2].…”

“…Thus, it can ensure devices withstand high temperature operations without failing [7]. Presently, many systems have been proposed, such as Cu-Sn [8], Ag-Sn [9], Au-Sn [10], Ni-Sn [11] and In-based systems [3,7], and the mechanism of IMCs growth and thermal-mechanical reliabilities have been investigated. It is found that Ag 3 Sn compounds have the best ductility in above systems [12], and both shear marks and dimples have ever been observed on the fracture surface of Ag 3 Sn joint [13].…”

Microstructure Evolution and Shear Property of Cu-In Transient Liquid Phase Sintering Joints

“…Although nano-particles sintering (Ag or Cu) can obtain high temperature resistant joints, high porosity, poor electrical and thermal conductivity and Ag migration remain to be resolved (Liu et al, 2021;Tuo et al, 2021). Recently, transient liquid phase sintering (TLPS) has been developed for power electronic package for the advantages of low bonding temperature and pressure, excellent high temperature resistance and high yield strength (Kejanli et al, 2009;Lee et al, 2015;Min et al, 2020). The principle of TLPS is that low melting point metals (Sn or In) melt at bonding temperature, and react with high melting point metals (such as Au, Ag, Ni, and Cu) to form high melting point intermetallic compounds (IMCs) Eom et al, 2019).…”

Rapid Ag/Sn/Ag transient liquid phase bonding for high-temperature power devices packaging by the assistance of ultrasound

“…(2) More and more electronic systems are required to be operated in harsh environments, such as high temperature, large current, and humid ambient. For instance, the control and sensing electronics in deep oil and gas drilling will be need to survive pressure reaching to 30000 psi and temperature up to 300 ºC for deeper exploration [3]. The high-temperature applications bring great challenges to the electronic material and packaging technology.…”