Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films

Klema, Jon; Pyle, Ronald E.; Domangue, Edward

doi:10.1109/irps.1984.362012

Cited by 47 publications

(20 citation statements)

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“…Consider the limiting case of a highly shallow specimen in which only one fringe order is observed when the shearing distance equals half the specimen width. Then, using a finite difference relation for the phase change in the optical wave front, aS = S (xl,x2 + ~) -S(xl,x2) = X, (6) where d/2 is half the specimen width and represents the shearing distance and k is the wavelengrth of light. Thus, normal curvature is approximated as Therefore, for a typical specimen width of 50 mm and wavelength of light of 632.8 rim, we obtain a limiting minimum value of curvature, ~:22 ~ 0.001 m -1, that is, a maximum radius of curvature of 1000 m. Thus, the technique needs to be enhanced for its application to very fiat specimens with curvatures k: < 0.001 m -].…”

Section: Sensitivity Enhancement For Cgsmentioning

confidence: 99%

“…The layers exhibit different mechanical, physical and thermal properties, leading to high stresses in interconnection structures. These stresses cause stress-induced 6 18 19 25 voiding,, -are directly related to electromigration -and may cause cracking of the substrate. 3 All of the preceding are leading failure mechanisms in integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

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Determination of the yield properties of thin films using enhanced coherent gradient sensing

Singh

Rosakis

2001

Experimental Mechanics

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ABSTRACT--This paper describes coherent gradient sensing (CGS) as an optical, full-field, real-time, nonintrusive, noncontact technique for measurement of curvature and curvature changes in single-layered and multilayered thin films deposited on substrates. The sensitivity of the basic CGS technique is enhanced using optical fringe multiplication to map curvature in very flat specimens (K < 0.001 m-l). Subsequently, this curvature measurement technique is applied to the determination of the yield properties of thin films subjected to cyclic thermomechanical loading.

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Section: Sensitivity Enhancement For Cgsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Determination of the yield properties of thin films using enhanced coherent gradient sensing

Singh

Rosakis

2001

Experimental Mechanics

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“…1, 2 In general, electromigration and mechanical stress related damages have been identified as the major causes for these interconnect failures in aluminum conductors. 3,4 Copper is the major candidate to replace aluminum alloys as the interconnect material for advanced ICs, [5][6][7][8] because it has lower resistivity and higher resistance against electromigration failure.…”

Section: ͓S0003-6951͑00͒03903-6͔mentioning

confidence: 99%

X-ray microdiffraction study of Cu interconnects

Zhang

Solak

Cerrina

et al. 2000

Applied Physics Letters

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We have used x-ray microdiffraction to study the local structure and strain variation of copper interconnects. Different types of local microstructures have been found in different samples. Our data show that the Ti adhesion layer has a very dramatic effect on Cu microstructure. Strain measurement was conducted before and after electromigration test, Cu fluorescence was used to find the mass variations around voids and hillocks, and x-ray microdiffraction was used to measure the strain change around that interested region.

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“…Also, the film should be free from impurities. Other researchers showed that impurities like hydrogen, 8 nitrogen, 9 and oxygen 10 have bad effects on the migration resistance of metal lines.…”

Section: Laboratory For Advanced Materials Processing (Lamp) Departmmentioning

confidence: 99%

Structural characterization of aluminum films deposited on sputtered-titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane

Kim

Rhee

1995

Applied Physics Letters

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Al films deposited on sputtered-TiN/Si substrate by metalorganic chemical vapor deposition (MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x-ray diffraction (XRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The TiN film sputtered on the Si has a preferred orientation along the growth direction with the 〈111〉 of the film parallel to the Si〈111〉. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of Al deposition. In the Al grains, there exist many tangled dislocations and a few Al2O3 particles. With increasing deposition time, the Al film surface roughness increases.

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Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films

Cited by 47 publications

References 0 publications

Determination of the yield properties of thin films using enhanced coherent gradient sensing

Determination of the yield properties of thin films using enhanced coherent gradient sensing

X-ray microdiffraction study of Cu interconnects

Structural characterization of aluminum films deposited on sputtered-titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane

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