Structural characterization of aluminum films deposited on sputtered-titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane

Li, Xiaodong; Kim, Byoung‐Youp; Rhee, Shi‐Woo

doi:10.1063/1.115268

Cited by 15 publications

(9 citation statements)

References 9 publications

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“…4,5 Kaizuka et al and Li et al reported that Al films on CVD-TiN͑111͒ films showed ͑111͒ preferred orientation. [6][7][8] Study of the microstructure and surface roughness of copper films deposited on crystallized metallorganic ͑MO͒CVD-TiN substrates was reported. 9 Gittis and Dobrev explained preferred orientation in the film in terms of the surface energy and kinetic factors.…”

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confidence: 99%

Microstructure of Copper Films Deposited on TiN Substrate by Metallorganic Chemical Vapor Deposition

Kang

Yun

Rhee

2002

J. Electrochem. Soc.

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The microstructure of copper films deposited on various TiN substrates by metallorganic chemical vapor deposition ͑MOCVD͒ from ͑hexafluoroacetylacetonate͒Cu͑I͒͑vinyltrimethylsilane͒ ͓(hfac͒Cu ͑I͒ ͑VTMS͔͒ was studied. TiN films for copper barrier were formed by MOCVD on Si͑100͒ at a deposition temperature of 250-350°C. The ͑200͒ plane in the TiN crystal is the preferred growth direction and as the roughness of the TiN film was increased, the growth direction was tilted away from the vertical direction to the substrate, which caused the crossover from the preferred growth direction to the ͗111͘ direction. On the other hand, for copper, ͑111͒ is the preferred direction and the crossover is to the ͗200͘ direction. The ratio of Cu͑111͒/Cu͑200͒ was increased with the decrease of TiN͑111͒/TiN͑200͒ ratio due to the influence of the tilted surface formed by the roughness of the TiN substrate. As the roughness of the TiN substrate increased, the roughness of the copper film also increased, but the grain size was not affected.Copper is a promising interconnection material for the ultralarge scale integration ͑ULSI͒ due to its lower resistivity, better electromigration resistance, and higher melting temperature compared with aluminum. 1 But there are problems associated with copper such as its fast diffusion into Si and relatively low interfacial reaction temperature with the contact material. For this reason, a diffusion barrier is essential in the copper metallization schemes. TiN has been an excellent barrier material in various metallization structures of advanced microelectronic devices. It serves as a diffusion barrier during or after high temperature Al reflow processing. In addition, TiN is considered as a diffusion barrier material for Cu metallization. 2,3 Sputtered TiN has been widely used but, due to the decreased feature size in silicon devices, chemical vapor deposition ͑CVD͒ of TiN is required for the conformal coverage on the patterned surface. Electrical properties of a thin film, like conductivity and electromigration resistance, depend on the morphology and microstructure, and it is well known that the morphology and structure of the film strongly depend on the underlayer. 4,5 Kaizuka et al. and Li et al. reported that Al films on CVD-TiN͑111͒ films showed ͑111͒ preferred orientation. 6-8 Study of the microstructure and surface roughness of copper films deposited on crystallized metallorganic ͑MO͒CVD-TiN substrates was reported. 9 Gittis and Dobrev explained preferred orientation in the film in terms of the surface energy and kinetic factors. 10 At high temperature, absorbed atoms having a high atomic mobility have a sufficient time to migrate on the surface. It is expected that the atoms will arrange themselves into close-packed ͑111͒ orientation having a lower surface energy. At low temperatures, the atoms on the surface, before taking up the energetically most favorable configuration, can be fixed by further layer deposition, which leads to the formation of a ͑200͒ orientation different from the most ...

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confidence: 99%

Microstructure of Copper Films Deposited on TiN Substrate by Metallorganic Chemical Vapor Deposition

Kang

Yun

Rhee

2002

J. Electrochem. Soc.

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“…In Fig. 9(a), the 2θ peak appeared at 38.52, 45.10, and 65.14 degrees with the orientation of 111, 200, and 220 respectively corresponding to Al crystal peaks (JCPDS number: 00-004-0787) [21], [29].…”

Section: E Surface Morphology and Structural Characterizationmentioning

confidence: 99%

Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Rahman

Lee²,

Uddin³

et al. 2023

EJENG

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Nanostructured Al thin film with higher optical transmittance and electrical conductivity has intensive applications in solar cells and optical and microelectronic devices. This experimental-based research study has optimized the DC magnetron sputtering deposition parameters (sputtering power, sputtering current, voltage, and working gas pressure) for Al thin film deposition to obtain the highest optical transmittance and lower sheet resistance. Optical transmittance, surface roughness, film thickness, sheet resistance, grain size, and surface morphology were characterized using UV-vis-NIR spectroscopy, surface profiler, spectroscopic ellipsometry, four-point probe, and FE-SEM, respectively to determine the effects of sputtering process parameters on Al films’ different properties. Experimental investigations reveal that electrical conductivity, surface roughness, grain size, and deposition rate increase with increasing of sputtering power at certain working gas pressure. At the optimized condition (sputtering power 80 W, working gas pressure 5 mTorr, deposition time 5 min and ambient temperature), the relatively higher optical transmittance in visible region 96%, moderate sheet resistance 0.196 ohm/square and lowest average surface roughness 2.86 nm were obtained for Al thin film. After all, this research study will help to understand the best Al film deposition parameters in terms of optical transmittance and electrical conductivity for future research and industrial applications.

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“…On the other hand, the scratched tester is used in the case of dry coating for example titanium nitride (TiN). [2][3][4][5][6][7][8][9] In the experiment on the plating are never seen.…”

Section: Introductionmentioning

confidence: 99%

Influence of mechanical properties on the adhesion strength of the nickel plating

Takago

Yasui

Uemura

et al. 2014

Jpn. J. Appl. Phys.

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For the purpose of establishing a quantitative method of the adhesion strength of metal plating, scratch examination which is applying in ceramic coating was conducted and performed the comparison with the adhesion test of the ISO 2819 and Japanese Industrial Standards about the effectiveness. With diamond indenter having tip a radius of 0.2, 0.4, and 0.8 mm, scratched at a plating surface while gradually increasing load on the indenter and a load to generate a crack near the scratch was checked whether producing significant difference. In addition, the influence of material properties of the plating including crystal structure and the internal stress gave to the adhesion strength was examined. As a result, the adhesion strength decreased with the growth of the crystal, and it was revealed that the stress in the plating did not influence the adhesion strength.

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Structural characterization of aluminum films deposited on sputtered-titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane

Cited by 15 publications

References 9 publications

Microstructure of Copper Films Deposited on TiN Substrate by Metallorganic Chemical Vapor Deposition

Microstructure of Copper Films Deposited on TiN Substrate by Metallorganic Chemical Vapor Deposition

Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Influence of mechanical properties on the adhesion strength of the nickel plating

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