Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification

International audienceIn this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300°C. By comparing gate pad topology and by localized FIB cuts, Optical Beam Induce Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. Electrical characterization of the gate to source diode over temperatures supports the discrimination of the conduction mechanisms like thermionic field emission, Fowler-Nordheim or Poole-Frenkel. The OBIRCh analysis technique, widely used in silicon technology, appears to be a very efficient tool to localize leakage paths, in particular for HEMT topology with source terminated field plate

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“…2). A similar evolution is observed on the reverse gate current under the same biasing condition [3].…”

Section: Storage Test Description and Electrical Parameter Driftsupporting

confidence: 76%

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Lambert

Labat

Carisetti

et al. 2012

Microelectronics Reliability

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“…The difference in Tchannel between assumed constant TBRGaN-dia and measured TBRGaN-dia is ~ 10% at 100 °C or 150 °C Tbase with a power dissipation of 12 W/mm. This translates to a difference of one order of magnitude in operating life if we assume a typical activation energy of 1.8 eV for thermally driven wearout [22]. At high temperatures during device operation, the reduced thermal conductivity of GaN causes the in-plane heat dissipation near the device channel to be less efficient, and thus a decreased TBRGaN-dia is particularly beneficial as it allows the heat to flow more efficiently into the diamond substrate.…”

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Sun

Pomeroy

Simon

et al. 2016

IEEE Electron Device Lett.

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“…Channel temperature data is a critical parameter for high temperature operating life (HTOL) tests. Measurements performed at multiple junction temperatures enable activation energies to be determined by applying the Arrhenius equation [1]. Mean time to failure (MTTF) can then be extrapolated from the elevated test temperature to the normal operating temperature, typically around 175°C for GaN devices.…”

Section: Introductionmentioning

confidence: 99%

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

Pomeroy

Uren

Lambert

et al. 2015

Microelectronics Reliability

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Abstract-Channel temperature is a key parameter for accelerated life testing in GaN HEMTs. It is assumed that selfheating is similar in RF and DC operation and that DC test results can be applied to RF operation. We investigate whether this assumption is valid by using an experimentally calibrated, combined electrical and thermal model to simulate Joule heating during RF operation and compare this to DC self-heating at same power dissipation. Two cases are examined and the implications for accelerated life testing are discussed: Typical (30 V) and high (100 V) drain voltages.

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Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification

Cited by 16 publications

References 3 publications

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

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