1990
DOI: 10.1002/qre.4680060204
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Reliability critical thermal model for double‐drift IMPATT diodes on diamond heat sinks

Abstract: A thermal model of double‐drift IMPATT diodes on diamond heat sinks has been developed. The thermal model approximates the temperature‐dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulae. The application of the thermal model to three IMPATT diode lots indicates that under life test, junction temperatures are greater than 700°C, and that the metal/Si interface temperatures exceed 500°C. An explanation of the failure mechanism is presented. Designs that result in a … Show more

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Cited by 6 publications
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“…In 1990, Csanky reported a thermal model of double-drift IMPATT diodes on diamond heat sinks. This thermal model approximates the temperature-dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulae [28].…”
Section: Introductionmentioning
confidence: 99%
“…In 1990, Csanky reported a thermal model of double-drift IMPATT diodes on diamond heat sinks. This thermal model approximates the temperature-dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulae [28].…”
Section: Introductionmentioning
confidence: 99%