2020
DOI: 10.1109/access.2020.2973578
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Reliability Assessment of IGBT Through Modelling and Experimental Testing

Abstract: Lifetime of power electronic devices, in particular those used for wind turbines, is short due to the generation of thermal stresses in their switching device e.g., IGBT particularly in the case of high switching frequency. This causes premature failure of the device leading to an unreliable performance in operation. Hence, appropriate thermal assessment and implementation of associated mitigation procedure are required to put in place in order to improve the reliability of the switching device. This paper pre… Show more

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Cited by 31 publications
(21 citation statements)
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“…erefore, the fault diagnosis method of IGBT devices is studied, maintaining overall system stability, reducing economic losses and casualties related to employees, and is significant. e original fault diagnosis method is primarily diagnosed with the hard fault of the short-circuit open circuit in the actual circuit [6]. It is not possible to improve the defects inside the device in good reactive devices.…”
Section: Introductionmentioning
confidence: 99%
“…erefore, the fault diagnosis method of IGBT devices is studied, maintaining overall system stability, reducing economic losses and casualties related to employees, and is significant. e original fault diagnosis method is primarily diagnosed with the hard fault of the short-circuit open circuit in the actual circuit [6]. It is not possible to improve the defects inside the device in good reactive devices.…”
Section: Introductionmentioning
confidence: 99%
“…The reliability assessment of IGBT is presented through a case study of IGBT based power inverter module, and the degradation behaviour of IGBT is analyzed through a machine learning approach. The failure of IGBT is explored at accelerated environmental parameters and mechanical stress [35]. A failure model for IGBT based photovoltaic (PV) systems based on the ageing effect is discussed.…”
Section: E Condition Monitoring Of Insulated Gate Bipolar Transistormentioning
confidence: 99%
“…Noteworthily, these experiments were stopped when the IGBT latch-up and thermal runaway which are the end-of-life (EOL) criteria. Under the aging experiment, the collector-emitter voltage (V ce ), gate-emitter voltage (V ge ), collector-current (I c ), Thermal and electrical resistance, and switch turn On (T on ) and turn Off (T off ) and time (seconds) were measured (physical quantities) [28]. In the rest of this paper, we use the collector-emitter voltage (V ce ) as a precursor signal [29].…”
Section: Raw Data Of Igbt Device (Data Collection)mentioning
confidence: 99%