Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

Hull, Brett; Allen, Scott T.; Zhang, Q.; Gajewski, D. A.; Pala, Vipindas; Richmond, Jim; Ryu, Sei‐Hyung; O’Loughlin, Michael J.; Brunt, Edward Van; Cheng, Lin; Burk, Albert A.; Casady, Jeff B.; Grider, David; Palmour, John W.

doi:10.1109/wipda.2014.6964641

Cited by 59 publications

(21 citation statements)

References 7 publications

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“…Several studies have been performed already regarding this aspect [42]- [44]. These studies show stable threshold voltages for V GS = −15 V of stress for 1000 h at 150°C.…”

Section: Discussionmentioning

confidence: 95%

“…It is important to note that the power module used to build the converter consists of parallel connection of single chips from the first generation of Cree devices. These components have evolved into a second generation and even a third where the reliability issues as well as performance have been investigated and improved [39]- [42]. Therefore, in this paper, the reliability calculations have been performed using the data from the second generation.…”

Section: Voltage Source Convertermentioning

confidence: 99%

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Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

Colmenares

Sadik

Hilber

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-Silicon carbide as an emerging technology offers potential benefits compared with the currently used silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reduce the losses. Furthermore, increasing the amount of components such as parallel connection of devices introduces an undesired tradeoff between efficiency and reliability, since an increased component count increases the probability of failure. A reliability analysis has been performed on a three-phase inverter rated at 312 kVA, using parallel-connected power modules. This analysis shows that the gate voltage stress has a high impact on the reliability of the complete system. Decreasing the positive gate-source voltage could, therefore, increase the reliability of the system approximately three times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure by approximately five times.

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“…Several studies have been performed already regarding this aspect [42]- [44]. These studies show stable threshold voltages for V GS = −15 V of stress for 1000 h at 150°C.…”

Section: Discussionmentioning

confidence: 95%

Section: Voltage Source Convertermentioning

confidence: 99%

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

Colmenares

Sadik

Hilber

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

show abstract

“…Several studies have been performed already regarding this aspect [21]- [23]. These studies show a stable threshold voltages for a V GS = -15 V of stress for 1000 hours at 150°C.…”

Section: Discussionmentioning

confidence: 96%

Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications

Colmenares

Sadik

Hilber

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired tradeoff between efficiency and reliability. A reliability analysis has been performed on a threephase inverter for motor drive applications rated at 312 kVA. This analysis has shown that the gate voltage stress determines the reliability of the complete system. Nevertheless, decreasing the positive gate-source voltage could increase the reliability of the system approximately 8 times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure approximately 5 times.

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“…It has been demonstrated in [10] that the 2 nd generation of Cree MOSFETs (C2M) can provide long term reliability, based on a stress of 1000 hours and 150C and 175C for a VGS of -15V and 20V respectively.…”

Section: Si and Sic Evaluation Devicesmentioning

confidence: 99%

Performance evaluation of SiC MOSFET in 5-level single phase converter

Gomez-Palomino

Foster

Stone

2016

8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)

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The use of silicon carbide (SiC) semiconductor power devices has been studied and evaluated in a wide variety of converters. The work presented in this paper shows the performance of C2M SiC MOSFETs compared to Si devices operating as switching elements in a 5-level, single phase, multilevel converter. The paper describes the multilevel converter platform used to undertake the evaluation study and experimental results for the operating temperature of the MOSFETs, and conversion efficiency are shown for frequencies ranging from 20 kHz to 80 kHz. Finally, a discussion of the results obtained to highlight the differences in the performance of the Si and SiC devices and the feasibility of using SiC in MLC.

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Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

Cited by 59 publications

References 7 publications

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications

Performance evaluation of SiC MOSFET in 5-level single phase converter

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