Performance evaluation of SiC MOSFET in 5-level single phase converter

Abstract

The use of silicon carbide (SiC) semiconductor power devices has been studied and evaluated in a wide variety of converters. The work presented in this paper shows the performance of C2M SiC MOSFETs compared to Si devices operating as switching elements in a 5-level, single phase, multilevel converter. The paper describes the multilevel converter platform used to undertake the evaluation study and experimental results for the operating temperature of the MOSFETs, and conversion efficiency are shown for frequencies ranging from 20 kHz to 80 kHz. Finally, a discussion of the results obtained to highlight the differences in the performance of the Si and SiC devices and the feasibility of using SiC in MLC.